辐射对15nm块体FinFET总电离剂量效应的模拟研究

IF 1.3 4区 工程技术 Q3 INSTRUMENTS & INSTRUMENTATION
J.Q. Fan, T.H. Hou, Q. Zhao, F. Zhang, K. Li, J. Fang, J.H. Hao, Z.W. Dong
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引用次数: 0

摘要

摘要FinFET是一种新型的主流半导体器件,在空间应用中得到了广泛的应用。本文通过模拟总电离剂量(TID)从0到1 Mrad对15nm n型体FinFET的影响,研究了空间应用中常见的辐射损伤效应。特别地,我们模拟了辐射损伤对FinFET传输特性曲线、阈值电压和亚阈值摆幅的影响。我们还改变了器件的一些工艺参数,如栅极长度、鳍宽和鳍高,以评估它们对器件辐射损伤敏感性的影响,结果表明栅极长度越长、鳍宽越宽、鳍高越高的器件结构具有更好的性能。此外,较高的通道掺杂浓度、栅极中使用sio2以及较低的器件工作温度也能有效降低TID效应。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Simulation study of total ionizing dose effect of gamma radiation on 15 nm bulk FinFET
Abstract FinFET is a new mainstream semiconductor device that is widely used in space applications. This paper studies the effects of radiation damage typically encountered in space applications by simulating the effects of total ionizing dose (TID) from 0 to 1 Mrad on a 15 nm n-type bulk FinFET. In particular we have simulated the effects of radiation damage on the transfer characteristic curve, threshold voltage and subthreshold swing of the FinFET. We have also varied some device process parameters such as gate length, fin width and fin height in order to assess their impact on the device susceptibility to radiation damage and our results show that the device structure with longer gate length, wider fin width and taller fin height have better performance. In addition, the higher channel doping concentration, the use of SiO 2 in the gate, and the low device operating temperature can also effectively reduce the TID effects.
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来源期刊
Journal of Instrumentation
Journal of Instrumentation 工程技术-仪器仪表
CiteScore
2.40
自引率
15.40%
发文量
827
审稿时长
7.5 months
期刊介绍: Journal of Instrumentation (JINST) covers major areas related to concepts and instrumentation in detector physics, accelerator science and associated experimental methods and techniques, theory, modelling and simulations. The main subject areas include. -Accelerators: concepts, modelling, simulations and sources- Instrumentation and hardware for accelerators: particles, synchrotron radiation, neutrons- Detector physics: concepts, processes, methods, modelling and simulations- Detectors, apparatus and methods for particle, astroparticle, nuclear, atomic, and molecular physics- Instrumentation and methods for plasma research- Methods and apparatus for astronomy and astrophysics- Detectors, methods and apparatus for biomedical applications, life sciences and material research- Instrumentation and techniques for medical imaging, diagnostics and therapy- Instrumentation and techniques for dosimetry, monitoring and radiation damage- Detectors, instrumentation and methods for non-destructive tests (NDT)- Detector readout concepts, electronics and data acquisition methods- Algorithms, software and data reduction methods- Materials and associated technologies, etc.- Engineering and technical issues. JINST also includes a section dedicated to technical reports and instrumentation theses.
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