在65nm CMOS中实现脉冲神经网络的低功耗模拟单元

IF 1.6 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
John S. Venker, Luke Vincent, Jeff Dix
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引用次数: 0

摘要

在65nm CMOS工艺中实现了一个峰值神经网络(SNN),以证明其组成单元的可行性。模拟硬件神经网络在实时推理应用(如语音识别)的边缘计算中显示出更高的能效。所提出的网络采用泄漏集成和火神经元方案进行计算,并与Spike Timing Dependent Plasticity (STDP)电路交织以实现突触样权值。低功耗、异步模拟神经元和突触是为有效利用硬件SSN系统所需的VLSI环境量身定制的。为了演示功能,实现了一个由两层组成的前馈脉冲神经网络,第一层有十个神经元,第二层有六个神经元。该神经元设计以每个尖峰2.1 pJ的功率和每个突触20 pJ的功率运行。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Low-Power Analog Cell for Implementing Spiking Neural Networks in 65 nm CMOS
A Spiking Neural Network (SNN) is realized within a 65 nm CMOS process to demonstrate the feasibility of its constituent cells. Analog hardware neural networks have shown improved energy efficiency in edge computing for real-time-inference applications, such as speech recognition. The proposed network uses a leaky integrate and fire neuron scheme for computation, interleaved with a Spike Timing Dependent Plasticity (STDP) circuit for implementing synaptic-like weights. The low-power, asynchronous analog neurons and synapses are tailored for the VLSI environment needed to effectively make use of hardware SSN systems. To demonstrate functionality, a feed-forward Spiking Neural Network composed of two layers, the first with ten neurons and the second with six, is implemented. The neuron design operates with 2.1 pJ of power per spike and 20 pJ per synaptic operation.
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来源期刊
Journal of Low Power Electronics and Applications
Journal of Low Power Electronics and Applications Engineering-Electrical and Electronic Engineering
CiteScore
3.60
自引率
14.30%
发文量
57
审稿时长
11 weeks
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