铍在水中辐射氧化的光谱发光和电物理研究

IF 0.5 Q4 PHYSICS, NUCLEAR

Problems of Atomic Science and Technology Pub Date : 2023-10-12 DOI:10.46813/2023-147-030

N.N. Gadzhieva, S.Z. Melikova, F.N. Nurmammadova, Sh.N. Nasirov, F.G. Asadov, B.A. Mammadov

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引用次数: 0

摘要

采用辐射热释光(RTL)、红外反射-吸附光谱(IRRAS)和电导率等方法研究了室温下吸收剂量范围为Dγ = 0.5…180 kGy的水中Be的辐射氧化行为。考虑了表面弛豫中间活性粒子在氧化过程变化动力学中的参与和作用。利用RTL方法，实验确定了γ辐照和化学吸附氧形成的表面氧孔中心在纳米氧化膜形成中的作用。红外光谱显示了水中Be表面纳米氧化膜的形成过程。研究了铍的辐射氧化动力学，建立了铍的辐射钝化反应。根据表面电阻率Be的对数剂量依赖性，揭示了氧化过程的两个阶段。结果表明，纳米氧化膜的形成使铍的表面电导率降低了2个数量级，氧化膜的厚度增加了1.6倍。

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SPECTRAL-LUMINESCENT AND ELECTROPHYSICAL STUDY OF RADIATION OXIDATION OF BERYLLIUM IN WATER

The radiation oxidation of Be in water at room temperature in the absorbed dose range Dγ = 0.5…180 kGy was studied by radiothermoluminescence (RTL), infrared reflection-adsorption spectroscopy (IRRAS), and electrical conductivity. The participation and role of surface relaxing intermediate-active particles in the dynamics of changes in the oxidation process are considered. Using the RTL method, the role of surface oxygen hole centers generated by γ-irradiation and chemisorbed oxygen in the formation of nanooxide films was experimentally established. The formation of nanooxide films on the surface of Be in water was traced in the IR reflection spectra. The kinetics of radiation oxidation of beryllium has been studied and its radiation passivation has been established. According to the logarithmic dose dependence of the surface resistivity Be, two stages of the oxidation process were revealed. It is shown that the formation of nano oxide films leads to a decrease in the surface electrical conductivity of beryllium by 2 orders of magnitude and an increase in the thickness of oxide films by 1.6 times.

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来源期刊

Problems of Atomic Science and Technology 物理-核科学技术

CiteScore

0.70

自引率

50.00%

发文量

审稿时长

2-4 weeks

期刊介绍： The journal covers the following topics: Physics of Radiation Effects and Radiation Materials Science; Nuclear Physics Investigations; Plasma Physics; Vacuum, Pure Materials and Superconductors; Plasma Electronics and New Methods of Acceleration.