研究硅氧烷中毒对SnO2金属氧化物半导体气体传感器在温度循环下的自监测和自补偿的影响

IF 0.8 4区 工程技术 Q4 INSTRUMENTS & INSTRUMENTATION
Caroline Schultealbert, Tobias Baur, Tilman Sauerwald, Andreas Schütze
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引用次数: 0

摘要

摘要本文研究了环硅氧烷八甲基环四硅氧烷在TCO(温度循环操作)下对市售半导体气体传感器的中毒作用。使用Sauerwald-Baur模型和DSR方法(微分表面还原)对数据进行评估。对几种气体(挥发性有机化合物、氢和一氧化碳)的灵敏度进行了评估,并与恒温工作模式下的传感器进行了比较。讨论了敏感层上的物理和化学过程以及对氢的选择性。从索尔瓦尔-鲍尔模型(差分表面氧化,DSO)中确定了一个特征,该特征定量地表达了有关硅氧烷中毒的传感器条件。利用这一特性,演示了传感器信号的自补偿。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Studying the effects of siloxane poisoning on a SnO2 metal oxide semiconductor gas sensor in temperature cycled operation enabling self-monitoring and self-compensation
Abstract This work studies poisoning by the cyclic siloxane octamethylcyclotetrasiloxane on a commercially available semiconductor gas sensor in TCO (temperature cycled operation). The data is evaluated using the Sauerwald-Baur model and the DSR method (differential surface reduction). The sensitivity towards several gases (volatile organic compounds, hydrogen and carbon monoxide) is evaluated and compared with a sensor in constant temperature operation mode. The physical and chemical processes on the sensitive layer as well as the resulting selectivity towards hydrogen are discussed. A feature is identified that can be derived from the Sauerwald-Baur model (the differential surface oxidation, DSO) and that quantitatively expresses the sensor condition regarding siloxane poisoning. With the help of this feature, a self-compensation of the sensor signal is demonstrated.
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来源期刊
Tm-Technisches Messen
Tm-Technisches Messen 工程技术-仪器仪表
CiteScore
1.70
自引率
20.00%
发文量
105
审稿时长
6-12 weeks
期刊介绍: The journal promotes dialogue between the developers of application-oriented sensors, measurement systems, and measurement methods and the manufacturers and measurement technologists who use them. Topics The manufacture and characteristics of new sensors for measurement technology in the industrial sector New measurement methods Hardware and software based processing and analysis of measurement signals to obtain measurement values The outcomes of employing new measurement systems and methods.
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