基于自旋电子学器件的电磁场探测器

IF 0.9 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY
R.L. Politanskyi, P.M. Shpatar, M.V. Vistak, I.T. Kogut, I.S. Diskovskyi, Yu.A. Rudyak
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引用次数: 0

摘要

本文提出了一种电磁辐射传感器的模型,该模型利用铁磁体(铁磁共振)中磁化矢量的进动(由于吸收入射电磁波的能量),由于这种进动产生自旋电流,由于自旋电流通过非磁性金属而产生自旋极化电流,低矫顽力铁磁层(自由层)的磁化方向由于自旋极化电流的通过而发生变化。然后通过其对整个结构电阻的影响来检测辐射,这取决于自由和固定(具有较大矫顽力)铁磁层(巨磁阻现象)磁化的相互方向(平行或反平行)。计算了器件内自旋极化电流与入射线性极化电磁波频率和幅值的关系。提出了一种计算传感器可探测到的辐射幅值和频率值范围的方法。该模型的参数为单个传感器的检测时间和自旋门数。给出了由坡莫合金制成的铁磁层和具有四种不同临界电流值的自旋阀的计算,这些电流值决定了自由层的再磁化过程:20、50、100和200微安。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electromagnetic field detectors based on spintronics devices
The paper proposes a model of an electromagnetic radiation sensor that uses the precession of the magnetization vector in a ferromagnet (ferromagnetic resonance) as a result of absorbing the energy of an incident electromagnetic wave, the generation of a spin current as a result of this precession, the generation of a spin-polarized current as a result of the passage of a spin current in a non-magnetic metal, and a change in the direction of magnetization of a ferromagnetic layer with a low coercive force (free layer) due to the passage of a spin-polarized current. Then the radiation will be detected by its effect on the electrical resistance of the entire structure, which depends on the mutual directions (parallel or antiparallel) of magnetization of the free and fixed (with a large coercive force) ferromagnetic layers (phenomenon of giant magnetic resistance). The dependence of the spin-polarized current in the device on the frequency and amplitude of the incident electromagnetic wave with linear polarization was calculated. A method of calculating the range of amplitude and frequency values of radiation that can be detected by the sensor has been developed. The parameters of this model are the detection time and the number of spin gates in one sensor. Calculations are given for a ferromagnetic layer made of permalloy and for spin valves with four different critical current values that determine the process of remagnetization of the free layer: 20, 50, 100, and 200 microamps.
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来源期刊
CiteScore
1.70
自引率
14.30%
发文量
83
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