Design and analysis of a group-III nitride superlattice structure based semiconductor laser diode for blue region emission

Abstract The demand for high-power blue laser diodes (LDs) in the range above 2 W has been steadily increasing due to their applications in solid-state lighting, projection displays, high-density optical data storage and underwater communication. However, current designs face limitations in terms of achieving both high power output and efficiency. This work focuses on the design, development and numerical analysis of a blue LD utilizing group-III nitride superlattice structures. The present study aims to overcome design challenges by investigating the fundamental factors affecting the performance of blue LDs based on superlattice InGaN structures through careful device parameter optimization. The results show that our device successfully emits at around 430 nm wavelength and is capable of achieving a differential quantum efficiency of 46.91%, with a maximal optical power output of 2.18 W for 1.71 A of current for a strip width of 15 µ m. However, when the strip width is increased to 20 µ m, 4.6 W optical power is achieved with 3 A of injection current. Numerical studies are performed with several calibrated physics models and finite-difference time-domain techniques. Our results provide an insight into the potential of using superlattice group-III nitride structures to enhance the performance of blue LDs, opening up new possibilities for high-power and high-efficiency devices in the future.