立体光刻工艺参数对氮化硅陶瓷浆料固化性能的影响

Lina Zhan , Yuzhibiao Xia , Xuan Zhang , Yao Liu , Shaojun Liu
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引用次数: 0

摘要

本文系统地研究了暴露时间和薄片厚度等工艺参数对氮化硅陶瓷浆料聚合动力学的影响。SLA过程中C=C转化率越高,初始暴露时料浆中的聚合速率越快。然而,当UV曝光时间从5秒增加到20秒时,浆料中固化的凝胶阻碍了自由基的扩散,导致C=C转化率停止。在曝光时间为10秒的情况下,浆料的C=C转化率高达81%,固化尺寸精度高达IT7级。当料浆侵彻深度等于片厚时,坯料两端C=C转化率相差至少21%。此外,通过立体光刻处理的Si3N4陶瓷没有翘曲或孔洞等缺陷。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effects of Stereolithography Process Parameters on the Curing Properties of Si3N4 Ceramic Slurries

This paper systematically investigates the effects of process parameters, such as exposure time and slice thickness, on the polymerization kinetics of a Si3N4 ceramic slurry. The higher the CC conversion rate in the SLA process, the faster the polymerization rate in the slurry during the initial exposure. However, when the UV exposure time is increased from 5 to 20 s, the solidified gel in the slurry hinders the diffusion of free radicals, causing the CC conversion rate to stop. The slurry achieves a CC conversion rate of up to 81% and a curing dimensional accuracy of up to IT7 level at an exposure time of 10 s. When the penetration depth of the slurry is equal to the slice thickness, the difference in CC conversion rates between the ends of the blank is at least 21%. Furthermore, the Si3N4 ceramics processed by stereolithography exhibit no defects, such as warpage or holes.

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