空气暴露对常压空间原子层沉积SnO2薄膜生长速率和电性能的影响

Hang Thi My Tran, Ngoc Linh Nguyen, Trung Kien Mac, Duc Anh Duong, Thien Thanh Nguyen, Anh-Tuan Duong, Hao Van Bui, Viet Huong NGUYEN
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引用次数: 0

摘要

sno2薄膜是目前研究最多的透明导电材料之一,可采用常压空间原子层沉积(AP-SALD)等无真空技术制备。本文研究了由乙酰丙酮锡和水蒸气制备的sno2薄膜,特别关注了AP-SALD过程中空气暴露对薄膜生长速度和电性能的影响。原位电阻测量和非原位霍尔效应表征表明,生长膜表面暴露在240°C的空气中时间越长,电导率就会下降,而膜的厚度则会减小。理论计算表明- OH和o2 dm(氧分子吸附在五配位的Sn原子上,也称为o2二聚体)是两种最稳定的表面结构。o2dm的形成是sno2(110)表面暴露在空气中时形成的最有利的热力学氧相关物质,导致膜厚度的减小(与- OH表面基团的解吸有关)和膜电阻率相对于空气的增加。优化后的多晶sno2样品具有较好的电学性能,电阻率为9.3 × 10−3 Ω。在低至240℃的生长温度下,载流子密度为9.2 × 10 19 cm−3,霍尔迁移率为7.3 cm 2 V−1 s−1。我们的研究结果揭示了露天处理对AP-SALD涂层技术获得的SnO 2薄膜的导电性的关键影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Impact of Air Exposure on Growth Rate and Electrical Properties of SnO2 Thin Films by Atmospheric Pressure Spatial Atomic Layer Deposition
Abstract SnO 2 thin film is one of the most studied transparent conductive materials that can be deposited using vacuum-free techniques such as atmospheric pressure spatial atomic layer deposition (AP-SALD). This work studies SnO 2 thin films prepared from tin(II) acetylacetonate and water vapor, with a particular focus on the impact of air exposure during the AP-SALD process on the growth rate and electrical properties of the films. In-situ resistance measurements and ex-situ Hall effect characterization demonstrated that longer exposure time of the growing film surface to the open air ( t air ) at 240 °C led to conductivity degradation, while the film thickness decreases. The theoretical calculations show that −OH and O 2 dm (oxygen molecule adsorbed on the five-coordinated Sn atom, also called O 2 dimer) are the two most stable surface structures. The formation of O 2 dm is shown as the most thermodynamically favorable oxygen-related species on SnO 2 (110) surface formed when the film is exposed to the open air, giving rise to both the decrease of film thickness (associated with the desorption of −OH surface groups) and the increase of film resistivity versus t air . The optimized polycrystalline SnO 2 sample demonstrated relatively good electrical performance, including an electrical resistivity of 9.3 × 10 −3 Ω.cm, carrier density of 9.2 × 10 19 cm −3 , and Hall mobility of 7.3 cm 2 V −1 s −1 at a growth temperature as low as 240 °C. Our findings reveal the critical impact of processing in the open air on the electrical conductivity of the obtained SnO 2 films by AP-SALD coating technology.
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