{"title":"碳化硅与氮化硅单芯CMUT的比较研究","authors":"Rakesh Kanjilal, Reshmi Maity","doi":"10.36548/jei.2023.3.006","DOIUrl":null,"url":null,"abstract":"This research explores the design and conducts a comparative analysis of a non-insulated Capacitive Micromachined Ultrasonic Transducer (CMUT) featuring an innovative asymmetric electrode configuration to improve the performance of the device. Specifically, this configuration involves the utilization of a top electrode with a smaller radius in comparison to the bottom electrode. The study encompasses an investigation into the effects of varying biasing voltage within the range of 40 V to 100 V. The materials employed in this study are carefully selected to optimize the CMUT's performance. The substrate material is silicon, and the bottom and top electrodes are made from aluminium. Additionally, silicon dioxide is utilized as the foundation material within the device's structure.","PeriodicalId":52825,"journal":{"name":"Journal of Electrical Electronics and Informatics","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Comparative Study between Silicon Carbide and Silicon Nitride based Single Cell CMUT\",\"authors\":\"Rakesh Kanjilal, Reshmi Maity\",\"doi\":\"10.36548/jei.2023.3.006\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This research explores the design and conducts a comparative analysis of a non-insulated Capacitive Micromachined Ultrasonic Transducer (CMUT) featuring an innovative asymmetric electrode configuration to improve the performance of the device. Specifically, this configuration involves the utilization of a top electrode with a smaller radius in comparison to the bottom electrode. The study encompasses an investigation into the effects of varying biasing voltage within the range of 40 V to 100 V. The materials employed in this study are carefully selected to optimize the CMUT's performance. The substrate material is silicon, and the bottom and top electrodes are made from aluminium. Additionally, silicon dioxide is utilized as the foundation material within the device's structure.\",\"PeriodicalId\":52825,\"journal\":{\"name\":\"Journal of Electrical Electronics and Informatics\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Electrical Electronics and Informatics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.36548/jei.2023.3.006\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Electrical Electronics and Informatics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.36548/jei.2023.3.006","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Comparative Study between Silicon Carbide and Silicon Nitride based Single Cell CMUT
This research explores the design and conducts a comparative analysis of a non-insulated Capacitive Micromachined Ultrasonic Transducer (CMUT) featuring an innovative asymmetric electrode configuration to improve the performance of the device. Specifically, this configuration involves the utilization of a top electrode with a smaller radius in comparison to the bottom electrode. The study encompasses an investigation into the effects of varying biasing voltage within the range of 40 V to 100 V. The materials employed in this study are carefully selected to optimize the CMUT's performance. The substrate material is silicon, and the bottom and top electrodes are made from aluminium. Additionally, silicon dioxide is utilized as the foundation material within the device's structure.
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