{"title":"氮化铝超宽带隙半导体能否制成高效的金属氧化物半导体器件?","authors":"","doi":"10.14738/tecs.115.15831","DOIUrl":null,"url":null,"abstract":"The question of whether one can make an efficient metal-oxide-semiconductor (MOS) device using wurtzite Aluminium Nitride semiconductor is answered in this short communication.","PeriodicalId":119801,"journal":{"name":"Transactions on Machine Learning and Artificial Intelligence","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2023-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Can an Efficient Metal-Oxide-Semiconductor Device be Made from Aluminium Nitride Ultra-Wide Bandgap Semiconductor?\",\"authors\":\"\",\"doi\":\"10.14738/tecs.115.15831\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The question of whether one can make an efficient metal-oxide-semiconductor (MOS) device using wurtzite Aluminium Nitride semiconductor is answered in this short communication.\",\"PeriodicalId\":119801,\"journal\":{\"name\":\"Transactions on Machine Learning and Artificial Intelligence\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-11-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Transactions on Machine Learning and Artificial Intelligence\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.14738/tecs.115.15831\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Transactions on Machine Learning and Artificial Intelligence","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.14738/tecs.115.15831","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Can an Efficient Metal-Oxide-Semiconductor Device be Made from Aluminium Nitride Ultra-Wide Bandgap Semiconductor?
The question of whether one can make an efficient metal-oxide-semiconductor (MOS) device using wurtzite Aluminium Nitride semiconductor is answered in this short communication.
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