表面分析中的电子非弹性散射

Shigeo TANUMA
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引用次数: 0

摘要

本文介绍了以介电响应函数和光能量损失函数为关键参数的电子非弹性平均自由程(imfp)计算的最新进展。结果发现,对于大多数材料,在300 eV以上的能量区域,各种计算算法计算出的IMFP值吻合得很好。然而,在200 eV以下的能量有很大的差异。在50 ~ 200 keV的能量范围内,用修正的Bethe方程可以表示由光学ELFs计算的imfp的能量依赖关系。imfp的物质依赖性可以用TPP-2M方程表示。对于IMFP计算,电子交换效应的处理和评价、能量损失函数中能隙的影响以及相关的积分区域也是未来需要解决的重要问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electron Inelastic Scattering in Surface Analysis
This paper describes the recent progress in electron inelastic mean free paths (IMFPs) calculations with the dielectric response function and the optical energy loss function (ELF) as key parameters. As a result, it has been found that for most materials, the IMFP values calculated by the various calculation algorithms agreed well each other in the energy region above 300 eV. However, there is a large difference in the energies under 200 eV. The energy dependence of IMFPs calculated from optical ELFs could be expressed by the modified Bethe equation in the energies between 50 eV and 200 keV. The material dependence of IMFPs could be expressed by the TPP-2M equation. For IMFP calculations, the treatments and evaluations of the electron exchange effect, the effect of energy gap in the energy loss function, and the associated integral region also remain important issues to be addressed in the future.
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