莫特物理学——量子材料的主要主题之一

Dong-Lai Feng
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引用次数: 0

摘要

电子在相关量子材料中的流动行为和局域行为之间的竞争与合作,被称为莫特物理,是许多量子材料多种状态背后的物理机制。本文综述了莫特物理在各种量子材料中的表现,并将其确立为量子材料的主要主题之一。发现和理解其不断变化的表现方式是凝聚态物理实验研究的中心任务之一。其中,以表面k -剂量Sr<sub>2</sub>IrO<sub>4</sub>为例说明了Mott跃迁的填充控制途径,该跃迁表现出d波隙、低掺杂状态下的赝隙行为和电子态分布不均匀的相分离。所有这些都显示出与掺杂铜超导体的强烈相似性,这是另一种典型的莫特跃迁填充控制类型。另一方面,Mott跃迁的带宽控制路径在NiS<sub>2 -<i>x</i></sub>Se<sub>< /i> i>x</i></sub>中,其带宽随着硒浓度的降低而不断减小,直至成为绝缘子。此外,在铁基超导体中掺杂各种方式的本质是改变其带宽。超导电性在中等带宽出现,相关系数中等;当带宽较大,电子相关系数较弱时,超导性减弱。对于重电子掺杂的铁硒化物,甚至存在具有强相关性的莫特绝缘体相。</sec><sec>对于碳基材料,A15 Cs<sub>3& gt; /sub>C<sub>60</sub>;随着富勒烯阴离子体积的减少,可以用带宽控制莫特跃迁来理解;在电门控扭角双层石墨烯中发现的绝缘体-超导体跃迁可以理解为填充控制的莫特跃迁。对于f电子系统,流动和局域化之间的相互作用主导了重费米子行为及其基态。利用CeCoIn<sub>5</sub>的角分辨光电发射数据证明了f电子的行为,其f电子带随着温度的降低变得更加相干,从而增强了c-f杂化,导带带质量不断增加。CeCoIn<sub>5,</sub>CeIrIn< sub<5</sub>和cerin< sub<5</sub>杂化强度的差异使它们的基态处于不同的Doniach相图区。同样,Skutterudites (Skutterudites) 4f<sup>2</sup>近藤格系PrOs<sub>4</sub>Sb<sub>12<和它的兄弟姐妹4f<sup>1</sup>系统CeOs< sub> 4 & lt; / sub> Sb< sub> 12 & lt; / sub>由于c-f杂化强度的微小差异,它们也具有不同的基态。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Mott physics — one of main themes in quantum materials
The competition and cooperation between the itinerancy behavior and localization behavior of electrons in correlated quantum materials, known as Mott physics, is the physical mechanism behind the diverse states of many quantum materials. This article reviews the manifestation of Mott physics in various quantum materials and establishes it as one of the main themes of quantum materials. Finding and understanding its ever-changing ways of manifestation is one of the central tasks of experimental research on condensed matter physics.Specifically, the filling-control route of Mott transition is illustrated by exampling the surface K-dosed Sr2IrO4, which exhibits d-wave gap, pseudogap behavior in underdoped regime, and phase separation with inhomogeneous electronic state distribution. All of these show strong resemblances to the doped cuprate superconductors, another prototypical filling-control type of Mott transition case. On the other hand, the bandwidth-control route of Mott transition could be found in NiS2–xSex, where its bandwidth continuously decreases with Se concentration decreasing, until it becomes an insulator. In addition, the essence of various ways of doping in iron-based superconductors is to change their bandwidths. The superconductivity shows up at intermediate bandwidth with moderate correlations, and it diminishes when the bandwidth is large and the electron correlations are weak. For heavily electron-doped iron-selenides, there is even a Mott insulator phase with strong correlations.For carbon based materials, the phase transition between the antiferromagnetic insulator and superconducting state of A15 Cs3C60 as the volume of fullerene anions decreases could be understood in terms of a bandwidth-control Mott transition; the insulator-superconductor transition discovered in electrically gated twisted-angle bilayer graphene could be understood as a filling-control Mott transition.For f electron systems, the interplay between itinerancy and localization dominates the heavy fermion behavior and their ground states. The behaviors of the f electrons are demonstrated by using the angle-resolved photoemission data of CeCoIn5, whose f electron band becomes more coherent with temperature decreasing, and the c-f hybridization is thus enhanced and the band mass of conduction band continuously increases. The c-f hybridization behaviors of CeCoIn5, CeIrIn5, and CeRhIn5 are compared with each other, and the differences in hybridization strength put their ground states into different regimes of the Doniach phase diagram. Similarly, the Skutterudites 4f2 Kondo lattice system PrOs4Sb12 and its sibling 4f1 system CeOs4Sb12 also have different ground states due to a slight difference in their c-f hybridization strengths.
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