{"title":"甲基紫有机染料分子对Ag/P-Inp结构的屏障修饰","authors":"Ömer Güllü","doi":"10.2478/ejfe-2023-0006","DOIUrl":null,"url":null,"abstract":"Abstract This work includes fabrication and electrical characterization of M etal/ I nterlayer/ S emiconductor (MIS) structures with methyl violet organic film on p- InP wafer. Metal(Ag)/ Interlayer (methyl violet =MV)/Semiconductor( p -InP) MIS structure presents a rectifying contact behavior. The values of ideality factor ( n ) and barrier height (BH) for the Ag/MV/ p -InP MIS diode by using the current-voltage ( I - V) measurement have been extracted as 1.21 and 0.84 eV, respectively. It was seen that the BH value of 0.84 eV calculated for the Ag/MV/ p -InP MIS structure was significantly higher than the value of 0.64 eV of Ag/ p -InP control contact. This situation was ascribed to the fact that the MV organic interlayer increased the effective barrier height by influencing the space charge region of inorganic semiconductor. The values of diffusion potential and barrier height for the Ag/MV/ p -InP MIS diode by using the capacitance-voltage ( C - V) measurement have been extracted as 1.21 V and 0.84 eV, respectively. The interface-state density of the Ag/MV/ p -InP structure was seen to change from 2.57×10 13 eV -1 cm -2 to 2.19×10 12 eV -1 cm -2 .","PeriodicalId":487204,"journal":{"name":"European Journal of Formal Sciences and Engineering","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Barrier Modification by Methyl Violet Organic Dye Molecules of Ag/P-Inp Structures\",\"authors\":\"Ömer Güllü\",\"doi\":\"10.2478/ejfe-2023-0006\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstract This work includes fabrication and electrical characterization of M etal/ I nterlayer/ S emiconductor (MIS) structures with methyl violet organic film on p- InP wafer. Metal(Ag)/ Interlayer (methyl violet =MV)/Semiconductor( p -InP) MIS structure presents a rectifying contact behavior. The values of ideality factor ( n ) and barrier height (BH) for the Ag/MV/ p -InP MIS diode by using the current-voltage ( I - V) measurement have been extracted as 1.21 and 0.84 eV, respectively. It was seen that the BH value of 0.84 eV calculated for the Ag/MV/ p -InP MIS structure was significantly higher than the value of 0.64 eV of Ag/ p -InP control contact. This situation was ascribed to the fact that the MV organic interlayer increased the effective barrier height by influencing the space charge region of inorganic semiconductor. The values of diffusion potential and barrier height for the Ag/MV/ p -InP MIS diode by using the capacitance-voltage ( C - V) measurement have been extracted as 1.21 V and 0.84 eV, respectively. The interface-state density of the Ag/MV/ p -InP structure was seen to change from 2.57×10 13 eV -1 cm -2 to 2.19×10 12 eV -1 cm -2 .\",\"PeriodicalId\":487204,\"journal\":{\"name\":\"European Journal of Formal Sciences and Engineering\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"European Journal of Formal Sciences and Engineering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.2478/ejfe-2023-0006\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"European Journal of Formal Sciences and Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.2478/ejfe-2023-0006","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
摘要:本文研究了在p- InP晶圆上甲基紫有机薄膜金属/ I中间层/ S半导体(MIS)结构的制备和电学表征。金属(Ag)/中间层(甲基紫=MV)/半导体(p -InP) MIS结构呈现整流接触行为。利用电流-电压(I - V)测量得到Ag/MV/ p - inp MIS二极管的理想因数n和势垒高度BH分别为1.21和0.84 eV。结果表明,Ag/MV/ p -InP MIS结构的BH值为0.84 eV,显著高于Ag/ p -InP控制触点的BH值0.64 eV。这种情况归因于MV有机中间层通过影响无机半导体的空间电荷区来增加有效势垒高度。利用电容电压(C - V)测量得到Ag/MV/ p - inp MIS二极管的扩散电位和势垒高度分别为1.21 V和0.84 eV。Ag/MV/ p -InP结构的界面态密度从2.57×10 13 eV -1 cm -2变为2.19×10 12 eV -1 cm -2。
Barrier Modification by Methyl Violet Organic Dye Molecules of Ag/P-Inp Structures
Abstract This work includes fabrication and electrical characterization of M etal/ I nterlayer/ S emiconductor (MIS) structures with methyl violet organic film on p- InP wafer. Metal(Ag)/ Interlayer (methyl violet =MV)/Semiconductor( p -InP) MIS structure presents a rectifying contact behavior. The values of ideality factor ( n ) and barrier height (BH) for the Ag/MV/ p -InP MIS diode by using the current-voltage ( I - V) measurement have been extracted as 1.21 and 0.84 eV, respectively. It was seen that the BH value of 0.84 eV calculated for the Ag/MV/ p -InP MIS structure was significantly higher than the value of 0.64 eV of Ag/ p -InP control contact. This situation was ascribed to the fact that the MV organic interlayer increased the effective barrier height by influencing the space charge region of inorganic semiconductor. The values of diffusion potential and barrier height for the Ag/MV/ p -InP MIS diode by using the capacitance-voltage ( C - V) measurement have been extracted as 1.21 V and 0.84 eV, respectively. The interface-state density of the Ag/MV/ p -InP structure was seen to change from 2.57×10 13 eV -1 cm -2 to 2.19×10 12 eV -1 cm -2 .