薄膜铌酸锂光子集成器件:进展与机遇

None Xiao Xiong, None Qi-Tao Cao, None Yun-Feng Xiao
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引用次数: 0

摘要

铌酸锂作为应用最广泛的非线性光学晶体之一,近年来受到了学术界和工业界的极大关注。这种兴趣的激增可归因于薄膜铌酸锂(TFLN)晶圆的商业可用性和纳米制造技术的快速发展。2020年,晶圆级TFLN光子集成电路的成功制造取得了里程碑式的成就,为大规模生产和经济高效地制造基于TFLN的产品铺平了道路。目前,TFLN光子集成器件的研究主要集中在光操纵,即场调制和频率转换。利用铌酸锂的电光、声光、光弹性和压电效应来调制光的幅度、相位和频率。铌酸锂的二阶和三阶非线性特性使频率转换过程成为可能,从而导致了变频器、光频梳和超连续介质产生装置的发展。铌酸锂的这些特殊光学特性使电磁波能够覆盖从射频到太赫兹、红外和可见光波段。利用TFLN光子集成器件卓越的调制速率、宽的工作带宽、高效的非线性频率转换和低功耗等性能,展示了跨光信息处理、激光测距、光频梳、微波光学、精密测量、量子光学和量子计算等多种应用。据报道,基于tfln的激光器和放大器已经取得了显著的进展,光泵和电泵都可以使用。这些成就包括将增益材料(如稀土离子或异质结构)与III-V半导体相结合。将低维材料或可吸收金属与TFLN集成,也可实现基于TFLN的探测器。这些重大发展扩大了TFLN光子集成器件的潜在应用,从而为单片TFLN芯片铺平了道路。TFLN光子集成器件的多功能性和高性能在这些领域取得了革命性的进展,为尖端技术及其实际应用开辟了新的可能性。在此基础上,我们简要介绍了TFLN纳米加工技术的发展。随后,我们综述了TFLN光子集成器件的最新进展,包括激光器、功能非线性光学器件和探测器。最后,讨论了TFLN光子学的未来发展方向和潜在途径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thin-film lithium niobate photonic integrated devices: Progresses and opportunities
Lithium niobate, known as one of the most widely used nonlinear optical crystals, has recently received significant attention from both academia and industrial circles. The surge in interest can be attributed to the commercial availability of thin-film lithium niobate (TFLN) wafers and the rapid advancements in nanofabrication techniques. A milestone was achieved in 2020 with the successful fabrication of wafer-scale TFLN photonic integrated circuits, which paved the way for mass-producible and cost-effective manufacturing of TFLN-based products.At present, the majority of research on TFLN photonic integrated devices focuses on light manipulation, i.e. field modulation and frequency conversion. The electro-optic, acousto-optic, photo-elastic and piezo-electric effects of lithium niobate are harnessed to modulate the amplitude, phase and frequency of light. The second-order and third-order nonlinearities of lithium niobate enable frequency conversion processes, which leads to the development of frequency converters, optical frequency combs, and supercontinuum generation devices. These exceptional optical properties of lithium niobate enable the electromagnetic wave to manipulate covering from radio-frequency to terahertz, infrared, and visible bands. Using the outstanding performance of TFLN photonic integrated devices, including remarkable modulation rate, wide operation bandwidth, efficient nonlinear frequency conversion, and low power consumption, diverse applications, such as spanning optical information processing, laser ranging, optical frequency combs, microwave optics, precision measurement, quantum optics, and quantum computing, are demonstrated.Additionally, it is reported that TFLN-based lasers and amplifiers have made remarkable progress, and both optical and electrical pumps are available. These achievements include combining gain materials, such as rare-earth ions or heterostructures, with III-V semiconductors. The integration of low-dimensional materials or absorptive metals with TFLN can also realize TFLN-based detectors. These significant developments expand the potential applications of TFLN photonic integrated devices, thus paving the way for monolithic TFLN chips.The versatility and high performances of TFLN photonic integrated devices have made revolutionary progress in these fields, opening up new possibilities for cutting-edge technologies and their practical implementations. In this point of view, we briefly introduce the development of TFLN nanofabricationn technology. Subsequently, we review the latest progress of TFLN photonic integrated devices, including lasers, functional nonlinear optical devices, and detectors. Finally, we discuss the future development directions and potential ways of TFLN photonics.
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