{"title":"氧化层分形维数对C/SiC复合材料被动氧化的影响","authors":"QINGYONG ZHU, JINQUAN HUANG, XIAO XIAO","doi":"10.1142/s0218348x23501232","DOIUrl":null,"url":null,"abstract":"The C/SiC composite is a promising material for ablation-resistant thermal protection in near-space hypersonic environments. The formation of an SiO 2 oxide layer through passive oxidation on the surface of the composite is a significant factor influencing its performance. It is essential to accurately predict the thickness of the SiO 2 oxide layer and the recession and mass loss of the C/SiC composite during passive oxidation. The SiO 2 oxide layer is a typical porous media exhibiting self-similarity and thus fractal theory can be applied to establish the relation between the oxygen flow rate and microstructural parameters of the oxide layer. The Weierstrass–Mandelbrot (WM) function is employed to simulate the rough interfaces between the SiO 2 oxide layer and the C/SiC composite to evaluate the influence of the fractal dimensions of the oxide layer on the performance of thermal protection of the C/SiC composite. The results show that the C/SiC composite exhibits improved thermal protection performance when accompanied by a lower tortuosity fractal dimension and a higher pore area fractal dimension of the oxide layer. Conversely, the composite demonstrates enhanced ablation resistance with a higher tortuosity fractal dimension and a lower pore area fractal dimension of the oxide layer. The predictions of the calculation model show good agreement with the experimental data and demonstrate the critical influence of microstructural parameters of the oxide layer on passive oxidation of the composite, providing practical implications for designing materials with desired thermal protection or ablation resistance properties.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3000,"publicationDate":"2023-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"THE INFLUENCE OF FRACTAL DIMENSION OF OXIDE LAYER ON PASSIVE OXIDATION OF THE C/SiC COMPOSITE\",\"authors\":\"QINGYONG ZHU, JINQUAN HUANG, XIAO XIAO\",\"doi\":\"10.1142/s0218348x23501232\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The C/SiC composite is a promising material for ablation-resistant thermal protection in near-space hypersonic environments. The formation of an SiO 2 oxide layer through passive oxidation on the surface of the composite is a significant factor influencing its performance. It is essential to accurately predict the thickness of the SiO 2 oxide layer and the recession and mass loss of the C/SiC composite during passive oxidation. The SiO 2 oxide layer is a typical porous media exhibiting self-similarity and thus fractal theory can be applied to establish the relation between the oxygen flow rate and microstructural parameters of the oxide layer. The Weierstrass–Mandelbrot (WM) function is employed to simulate the rough interfaces between the SiO 2 oxide layer and the C/SiC composite to evaluate the influence of the fractal dimensions of the oxide layer on the performance of thermal protection of the C/SiC composite. The results show that the C/SiC composite exhibits improved thermal protection performance when accompanied by a lower tortuosity fractal dimension and a higher pore area fractal dimension of the oxide layer. Conversely, the composite demonstrates enhanced ablation resistance with a higher tortuosity fractal dimension and a lower pore area fractal dimension of the oxide layer. The predictions of the calculation model show good agreement with the experimental data and demonstrate the critical influence of microstructural parameters of the oxide layer on passive oxidation of the composite, providing practical implications for designing materials with desired thermal protection or ablation resistance properties.\",\"PeriodicalId\":3,\"journal\":{\"name\":\"ACS Applied Electronic Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.3000,\"publicationDate\":\"2023-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Electronic Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1142/s0218348x23501232\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1142/s0218348x23501232","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
THE INFLUENCE OF FRACTAL DIMENSION OF OXIDE LAYER ON PASSIVE OXIDATION OF THE C/SiC COMPOSITE
The C/SiC composite is a promising material for ablation-resistant thermal protection in near-space hypersonic environments. The formation of an SiO 2 oxide layer through passive oxidation on the surface of the composite is a significant factor influencing its performance. It is essential to accurately predict the thickness of the SiO 2 oxide layer and the recession and mass loss of the C/SiC composite during passive oxidation. The SiO 2 oxide layer is a typical porous media exhibiting self-similarity and thus fractal theory can be applied to establish the relation between the oxygen flow rate and microstructural parameters of the oxide layer. The Weierstrass–Mandelbrot (WM) function is employed to simulate the rough interfaces between the SiO 2 oxide layer and the C/SiC composite to evaluate the influence of the fractal dimensions of the oxide layer on the performance of thermal protection of the C/SiC composite. The results show that the C/SiC composite exhibits improved thermal protection performance when accompanied by a lower tortuosity fractal dimension and a higher pore area fractal dimension of the oxide layer. Conversely, the composite demonstrates enhanced ablation resistance with a higher tortuosity fractal dimension and a lower pore area fractal dimension of the oxide layer. The predictions of the calculation model show good agreement with the experimental data and demonstrate the critical influence of microstructural parameters of the oxide layer on passive oxidation of the composite, providing practical implications for designing materials with desired thermal protection or ablation resistance properties.