氧化层分形维数对C/SiC复合材料被动氧化的影响

IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
QINGYONG ZHU, JINQUAN HUANG, XIAO XIAO
{"title":"氧化层分形维数对C/SiC复合材料被动氧化的影响","authors":"QINGYONG ZHU, JINQUAN HUANG, XIAO XIAO","doi":"10.1142/s0218348x23501232","DOIUrl":null,"url":null,"abstract":"The C/SiC composite is a promising material for ablation-resistant thermal protection in near-space hypersonic environments. The formation of an SiO 2 oxide layer through passive oxidation on the surface of the composite is a significant factor influencing its performance. It is essential to accurately predict the thickness of the SiO 2 oxide layer and the recession and mass loss of the C/SiC composite during passive oxidation. The SiO 2 oxide layer is a typical porous media exhibiting self-similarity and thus fractal theory can be applied to establish the relation between the oxygen flow rate and microstructural parameters of the oxide layer. The Weierstrass–Mandelbrot (WM) function is employed to simulate the rough interfaces between the SiO 2 oxide layer and the C/SiC composite to evaluate the influence of the fractal dimensions of the oxide layer on the performance of thermal protection of the C/SiC composite. The results show that the C/SiC composite exhibits improved thermal protection performance when accompanied by a lower tortuosity fractal dimension and a higher pore area fractal dimension of the oxide layer. Conversely, the composite demonstrates enhanced ablation resistance with a higher tortuosity fractal dimension and a lower pore area fractal dimension of the oxide layer. The predictions of the calculation model show good agreement with the experimental data and demonstrate the critical influence of microstructural parameters of the oxide layer on passive oxidation of the composite, providing practical implications for designing materials with desired thermal protection or ablation resistance properties.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3000,"publicationDate":"2023-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"THE INFLUENCE OF FRACTAL DIMENSION OF OXIDE LAYER ON PASSIVE OXIDATION OF THE C/SiC COMPOSITE\",\"authors\":\"QINGYONG ZHU, JINQUAN HUANG, XIAO XIAO\",\"doi\":\"10.1142/s0218348x23501232\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The C/SiC composite is a promising material for ablation-resistant thermal protection in near-space hypersonic environments. The formation of an SiO 2 oxide layer through passive oxidation on the surface of the composite is a significant factor influencing its performance. It is essential to accurately predict the thickness of the SiO 2 oxide layer and the recession and mass loss of the C/SiC composite during passive oxidation. The SiO 2 oxide layer is a typical porous media exhibiting self-similarity and thus fractal theory can be applied to establish the relation between the oxygen flow rate and microstructural parameters of the oxide layer. The Weierstrass–Mandelbrot (WM) function is employed to simulate the rough interfaces between the SiO 2 oxide layer and the C/SiC composite to evaluate the influence of the fractal dimensions of the oxide layer on the performance of thermal protection of the C/SiC composite. The results show that the C/SiC composite exhibits improved thermal protection performance when accompanied by a lower tortuosity fractal dimension and a higher pore area fractal dimension of the oxide layer. Conversely, the composite demonstrates enhanced ablation resistance with a higher tortuosity fractal dimension and a lower pore area fractal dimension of the oxide layer. The predictions of the calculation model show good agreement with the experimental data and demonstrate the critical influence of microstructural parameters of the oxide layer on passive oxidation of the composite, providing practical implications for designing materials with desired thermal protection or ablation resistance properties.\",\"PeriodicalId\":3,\"journal\":{\"name\":\"ACS Applied Electronic Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.3000,\"publicationDate\":\"2023-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Electronic Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1142/s0218348x23501232\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1142/s0218348x23501232","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

C/SiC复合材料在近空间高超声速环境中是一种很有前途的抗烧蚀热防护材料。通过被动氧化在复合材料表面形成sio2氧化层是影响其性能的重要因素。准确预测C/SiC复合材料在被动氧化过程中sio2氧化层的厚度、退变和质量损失是至关重要的。sio2氧化层是一种典型的具有自相似性的多孔介质,因此可以应用分形理论建立氧流量与氧化层微观结构参数之间的关系。采用Weierstrass-Mandelbrot (WM)函数模拟sio2氧化层与C/SiC复合材料之间的粗糙界面,评价氧化层分形维数对C/SiC复合材料热防护性能的影响。结果表明,当氧化层的弯曲度分形维数降低、孔面积分形维数增大时,C/SiC复合材料的热防护性能得到改善。相反,复合材料的抗烧蚀性能随着氧化层弯曲度分形维数的增大和孔隙面积分形维数的减小而增强。计算模型的预测结果与实验数据吻合较好,证明了氧化层微观结构参数对复合材料被动氧化的关键影响,为设计具有理想热防护或抗烧蚀性能的材料提供了实际意义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
THE INFLUENCE OF FRACTAL DIMENSION OF OXIDE LAYER ON PASSIVE OXIDATION OF THE C/SiC COMPOSITE
The C/SiC composite is a promising material for ablation-resistant thermal protection in near-space hypersonic environments. The formation of an SiO 2 oxide layer through passive oxidation on the surface of the composite is a significant factor influencing its performance. It is essential to accurately predict the thickness of the SiO 2 oxide layer and the recession and mass loss of the C/SiC composite during passive oxidation. The SiO 2 oxide layer is a typical porous media exhibiting self-similarity and thus fractal theory can be applied to establish the relation between the oxygen flow rate and microstructural parameters of the oxide layer. The Weierstrass–Mandelbrot (WM) function is employed to simulate the rough interfaces between the SiO 2 oxide layer and the C/SiC composite to evaluate the influence of the fractal dimensions of the oxide layer on the performance of thermal protection of the C/SiC composite. The results show that the C/SiC composite exhibits improved thermal protection performance when accompanied by a lower tortuosity fractal dimension and a higher pore area fractal dimension of the oxide layer. Conversely, the composite demonstrates enhanced ablation resistance with a higher tortuosity fractal dimension and a lower pore area fractal dimension of the oxide layer. The predictions of the calculation model show good agreement with the experimental data and demonstrate the critical influence of microstructural parameters of the oxide layer on passive oxidation of the composite, providing practical implications for designing materials with desired thermal protection or ablation resistance properties.
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来源期刊
CiteScore
7.20
自引率
4.30%
发文量
567
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