高能球磨法制备掺钼Mn4Si7及表征

IF 0.6 4区物理与天体物理 Q4 PHYSICS, MULTIDISCIPLINARY

Indian Journal of Pure & Applied Physics Pub Date : 2023-01-01 DOI:10.56042/ijpap.v61i9.3491

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引用次数: 1

摘要

Mn4Si7是一种非简并半导体，其间接带隙为0.77eV，具有多域应用。采用高能球磨法在600转/分的转速下合成了Mn4Si7和mo掺杂Mn4Si7。从x射线衍射(XRD)中观察到四方相。用Debye-Scherrer方程估计晶体的平均尺寸在~ 25nm以下。形貌研究表明，扫描电镜(SEM)观察到不同的形状和大小。

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Synthetization and Characterization of Mo-doped Mn4Si7 by High Energy Ball Mill

Mn4Si7 is a non-degenerating semiconductor with an indirect band gap of 0.77eV having multi-domain applications. The Mn4Si7 and Mo-doped Mn4Si7 were synthesized by high-energy ball milling at 600 RPM for 50H. From the X-ray diffraction (XRD), the tetragonal phase was observed. The average crystalline size was estimated by the Debye-Scherrer equation which lies below ~25 nm. The morphology studies reveal different shapes and sizes were observed by scanning electron microscopy (SEM).

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来源期刊

Indian Journal of Pure & Applied Physics 物理-物理：综合

CiteScore

1.30

自引率

14.30%

发文量

审稿时长

7 months

期刊介绍： Started in 1963, this journal publishes Original Research Contribution as full papers, notes and reviews on classical and quantum physics, relativity and gravitation; statistical physics and thermodynamics; specific instrumentation and techniques of general use in physics, elementary particles and fields, nuclear physics, atomic and molecular physics, fundamental area of phenomenology, optics, acoustics and fluid dynamics, plasmas and electric discharges, condensed matter-structural, mechanical and thermal properties, electronic, structure, electrical, magnetic and optical properties, cross-disciplinary physics and related areas of science and technology, geophysics, astrophysics and astronomy. It also includes latest findings in the subject under News Scan.