高能球磨法合成含镁SnSe及表征

IF 0.6 4区物理与天体物理 Q4 PHYSICS, MULTIDISCIPLINARY

Indian Journal of Pure & Applied Physics Pub Date : 2023-01-01 DOI:10.56042/ijpap.v61i9.3494

{"title":"高能球磨法合成含镁SnSe及表征","authors":"","doi":"10.56042/ijpap.v61i9.3494","DOIUrl":null,"url":null,"abstract":"Tin selenide (SnSe) is a semiconductor with an orthorhombic crystal structure having an indirect and direct band gap of 0.9 eV and 1.3 eV respectively. The SnSe and Mg-doped SnSe was synthesized by high energy ball milling technique at 300 RPM for 22 hrs. The formation of pure orthorhombic phases of SnSe and Mg-doped SnSe were confirmed by X-ray diffraction (XRD). From the XRD pattern, the crystalline size was estimated which lies below ~10 nm. The morphology of particle size distribution was carried out by scanning electron microscopy (SEM).","PeriodicalId":13509,"journal":{"name":"Indian Journal of Pure & Applied Physics","volume":"63 1","pages":"0"},"PeriodicalIF":0.6000,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Synthetization and Characterization of Mg-doped SnSe with Mg Substitution at the Sn Site by High Energy Ball Milling Technique\",\"authors\":\"\",\"doi\":\"10.56042/ijpap.v61i9.3494\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Tin selenide (SnSe) is a semiconductor with an orthorhombic crystal structure having an indirect and direct band gap of 0.9 eV and 1.3 eV respectively. The SnSe and Mg-doped SnSe was synthesized by high energy ball milling technique at 300 RPM for 22 hrs. The formation of pure orthorhombic phases of SnSe and Mg-doped SnSe were confirmed by X-ray diffraction (XRD). From the XRD pattern, the crystalline size was estimated which lies below ~10 nm. The morphology of particle size distribution was carried out by scanning electron microscopy (SEM).\",\"PeriodicalId\":13509,\"journal\":{\"name\":\"Indian Journal of Pure & Applied Physics\",\"volume\":\"63 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2023-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Indian Journal of Pure & Applied Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.56042/ijpap.v61i9.3494\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Indian Journal of Pure & Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.56042/ijpap.v61i9.3494","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

摘要

硒化锡(SnSe)是一种具有正交晶体结构的半导体，其间接带隙和直接带隙分别为0.9 eV和1.3 eV。采用高能球磨技术，在300 RPM的转速下合成SnSe和掺杂mg的SnSe。通过x射线衍射(XRD)证实了SnSe和mg掺杂SnSe的纯正交相的形成。通过XRD谱图估计了晶体尺寸在~10 nm以下。采用扫描电子显微镜(SEM)对其粒度分布进行了形貌分析。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Synthetization and Characterization of Mg-doped SnSe with Mg Substitution at the Sn Site by High Energy Ball Milling Technique

Tin selenide (SnSe) is a semiconductor with an orthorhombic crystal structure having an indirect and direct band gap of 0.9 eV and 1.3 eV respectively. The SnSe and Mg-doped SnSe was synthesized by high energy ball milling technique at 300 RPM for 22 hrs. The formation of pure orthorhombic phases of SnSe and Mg-doped SnSe were confirmed by X-ray diffraction (XRD). From the XRD pattern, the crystalline size was estimated which lies below ~10 nm. The morphology of particle size distribution was carried out by scanning electron microscopy (SEM).

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Indian Journal of Pure & Applied Physics 物理-物理：综合

CiteScore

1.30

自引率

14.30%

发文量

审稿时长

7 months

期刊介绍： Started in 1963, this journal publishes Original Research Contribution as full papers, notes and reviews on classical and quantum physics, relativity and gravitation; statistical physics and thermodynamics; specific instrumentation and techniques of general use in physics, elementary particles and fields, nuclear physics, atomic and molecular physics, fundamental area of phenomenology, optics, acoustics and fluid dynamics, plasmas and electric discharges, condensed matter-structural, mechanical and thermal properties, electronic, structure, electrical, magnetic and optical properties, cross-disciplinary physics and related areas of science and technology, geophysics, astrophysics and astronomy. It also includes latest findings in the subject under News Scan.