两步法生长ZnSe薄膜及其特性研究

Pub Date : 2023-01-01 DOI:10.56042/ijpap.v61i9.3209

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引用次数: 0

摘要

采用熔合法制备的ZnSe材料，在真空(2x10- 6mbar)条件下，在300 K条件下在康宁玻璃基板上沉积了200 nm的薄层。在573 K真空(1x10- 3mbar)中对沉积膜进行退火。所获得的晶体沿(111)取向提供最显著的峰(MSP)，对应于锌闪锌矿结构。此外，生长的样品在em光谱的可见-近红外区显示出最大透射率~ 90%。层的直接带隙(Eg)分别为2.02 (300 K)和2.57 eV (573 K)，表面形貌表明纳米晶颗粒均匀分布在衬底上。因此，所得的ZnSe薄膜可作为太阳能电池结构中的缓冲/窗口层。

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A Two-step Method to Grow ZnSe Thin Films and To Study their Characteristics

The ZnSe material synthesised by the fusion method was used to deposit 200 nm thin layers on corning glass substrate at 300 K in a vacuum (2x10-6 mbar). The as-deposited films were annealed at 573 K in a vacuum (1x10-3 mbar). The obtained crystallites provide the most significant peak (MSP) along (111) orientations corresponding to a zinc blende structure. Further, the grown samples show maximum transmittance of ~ 90% in visible - NIR regions of the E M Spectrum. The layers possess the direct bandgap (Eg) of 2.02 (300 K) and 2.57 eV (573 K). The surface morphology indicates the uniform spread of nanocrystalline particles over the substrate. Thus, the obtained ZnSe films are useful as buffer/window layers in solar cell structures.

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