中价超导体CeIr3电子结构中ce4f态的影响

IF 2.9 Q3 CHEMISTRY, PHYSICAL
Shin-ichi Fujimori, Ikuto Kawasaki, Yukiharu Takeda, Hiroshi Yamagami, Norimasa Sasabe, Yoshiki J Sato, A Nakamura, Yusei Shimizu, Arvind Maurya, Y Homma, D. X. Li, Fuminori Honda, Dai Aoki
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引用次数: 0

摘要

摘要利用光电子能谱研究了f基超导体CeIr - 3的电子结构。ce3d4f共振光电子能谱揭示了ce4f态的能量分布。cef4态主要分布在费米能附近,表明了cef4态的流变性。在费米能量下,ce4f态对态密度(DOS)的贡献估计接近Ir 5d态的一半,这意味着ce4f态对费米能量下的DOS有相当大的贡献。基于单杂质Anderson模型分析了Ce三维核能级和Ce三维x射线吸收光谱。基态中ce4f态的个数估计为0.8 ~ 0.9,远远大于以往研究中得到的值(即0 ~ 0.4)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Impact of the Ce 4f states in the electronic structure of the intermediate-valence superconductor CeIr3
Abstract The electronic structure of the f -based superconductor CeIr 3 was studied by photoelectron spectroscopy. The energy distribution of the Ce 4 f state was revealed by the Ce 3 d − 4 f resonant photoelectron spectroscopy. The Ce 4 f state was mostly distributed in the vicinity of the Fermi energy, suggesting the itinerant character of the Ce 4 f state. The contribution of the Ce 4 f state to the density of states (DOS) at the Fermi energy was estimated to be nearly half of that of the Ir 5 d states, implying that the Ce 4 f state has a considerable contribution to the DOS at the Fermi energy. The Ce 3 d core-level and Ce 3 d X-ray absorption spectra were analyzed based on a single-impurity Anderson model. The number of the Ce 4 f state in the ground state was estimated to be 0.8 − 0.9, which is much larger than the values obtained in the previous studies (i.e., 0 − 0.4).
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来源期刊
CiteScore
3.70
自引率
11.50%
发文量
46
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