添加Zn对Mg-Mn-Bi纳米铁氧体结构、电学和介电性能的影响

IF 0.9 4区材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY

Journal of Ovonic Research Pub Date : 2023-10-01 DOI:10.15251/jor.2023.195.557

H. T. Ali, M. Akhtar, M. I. Arshad, N. Amin, A. U. Rehman, Z. Latif, M. A. Mehmood, M. A. Naveed

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引用次数: 0

摘要

采用溶胶-凝胶自燃烧法合成了锌取代的Mg-Mn-Bi纳米铁氧体Mg0.5𝑀𝑀𝑀𝑀0.5−x𝑍𝑍𝑍𝑍x𝑖0.05Fe1.95O4 (x= 0, 0.125, 0.25, 0.375, 0.5)。通过x射线衍射分析结构参数。结果表明，样品均为具有Fd-3m空间群的单相尖晶石结构，晶粒尺寸、晶格常数和x射线密度随Zn浓度的变化而变化。RAMAN分析显示阳离子振动。样品的直流电阻率随Zn浓度的增加而增强。用VSM观察到，锌的取代也导致了磁性参数的变化。由于这些显著的性质，所有制备的样品都可以在高频微波器件中使用。

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Tailoring of Structural, electrical, and dielectric properties of Mg-Mn-Bi nanoferrites with addition of Zn

Zin substituted Mg-Mn-Bi nano ferrites, Mg0.5 𝑀𝑀𝑀𝑀0.5−x 𝑍𝑍𝑍𝑍x 𝐵𝐵𝑖𝑖0.05Fe1.95O4 (x= 0, 0.125, 0.25, 0.375, 0.5) were synthesized using the sol gel auto combustion method. Structural parameters were analyzed through x-ray diffraction. It was revealed that all the samples are single phase spinel structure with Fd-3m space group and crystallite size, lattice constant and x-ray densities were varying with Zn concentration. RAMAN analysis showed the cation vibration. The DC resistivity was enhanced of all the samples with increasing concentration of Zn. The substitution of Zn also responsible for the variation of magnetic parameters as observed with VSM. Due to these remarkable properties all the prepared samples may be utilized at high frequency in microwave devices.

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来源期刊

Journal of Ovonic Research MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

CiteScore

1.90

自引率

20.00%

发文量

期刊介绍： Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.