{"title":"寄生元件对l型LC/CL匹配电路的影响","authors":"Satoshi Tanaka, Takeshi Yoshida, Minoru Fujishima","doi":"10.1587/transfun.2023gcp0004","DOIUrl":null,"url":null,"abstract":"L-type LC/CL matching circuits are well known for their simple analytical solutions and have been applied to many radio-frequency (RF) circuits. When actually constructing a circuit, parasitic elements are added to inductors and capacitors. Therefore, each L and C element has a self-resonant frequency, which affects the characteristics of the matching circuit. In this paper, the parallel parasitic capacitance to the inductor and the series parasitic inductor to the capacitance are taken up as parasitic elements, and the details of the effects of the self-resonant frequency of each element on the S11, voltage standing wave ratio (VSWR) and S21 characteristics are reported. When a parasitic element is added, each characteristic basically tends to deteriorate as the self-resonant frequency decreases. However, as an interesting feature, we found that the combination of resonant frequencies determines the VSWR and passband characteristics, regardless of whether it is the inductor or the capacitor.","PeriodicalId":55003,"journal":{"name":"Ieice Transactions on Fundamentals of Electronics Communications and Computer Sciences","volume":null,"pages":null},"PeriodicalIF":0.4000,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effects of parasitic elements on L-type LC/CL matching circuits\",\"authors\":\"Satoshi Tanaka, Takeshi Yoshida, Minoru Fujishima\",\"doi\":\"10.1587/transfun.2023gcp0004\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"L-type LC/CL matching circuits are well known for their simple analytical solutions and have been applied to many radio-frequency (RF) circuits. When actually constructing a circuit, parasitic elements are added to inductors and capacitors. Therefore, each L and C element has a self-resonant frequency, which affects the characteristics of the matching circuit. In this paper, the parallel parasitic capacitance to the inductor and the series parasitic inductor to the capacitance are taken up as parasitic elements, and the details of the effects of the self-resonant frequency of each element on the S11, voltage standing wave ratio (VSWR) and S21 characteristics are reported. When a parasitic element is added, each characteristic basically tends to deteriorate as the self-resonant frequency decreases. However, as an interesting feature, we found that the combination of resonant frequencies determines the VSWR and passband characteristics, regardless of whether it is the inductor or the capacitor.\",\"PeriodicalId\":55003,\"journal\":{\"name\":\"Ieice Transactions on Fundamentals of Electronics Communications and Computer Sciences\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.4000,\"publicationDate\":\"2023-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Ieice Transactions on Fundamentals of Electronics Communications and Computer Sciences\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1587/transfun.2023gcp0004\",\"RegionNum\":4,\"RegionCategory\":\"计算机科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ieice Transactions on Fundamentals of Electronics Communications and Computer Sciences","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1587/transfun.2023gcp0004","RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
Effects of parasitic elements on L-type LC/CL matching circuits
L-type LC/CL matching circuits are well known for their simple analytical solutions and have been applied to many radio-frequency (RF) circuits. When actually constructing a circuit, parasitic elements are added to inductors and capacitors. Therefore, each L and C element has a self-resonant frequency, which affects the characteristics of the matching circuit. In this paper, the parallel parasitic capacitance to the inductor and the series parasitic inductor to the capacitance are taken up as parasitic elements, and the details of the effects of the self-resonant frequency of each element on the S11, voltage standing wave ratio (VSWR) and S21 characteristics are reported. When a parasitic element is added, each characteristic basically tends to deteriorate as the self-resonant frequency decreases. However, as an interesting feature, we found that the combination of resonant frequencies determines the VSWR and passband characteristics, regardless of whether it is the inductor or the capacitor.
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