光场辅助下稀磁半导体/半导体超晶格的自旋极化输运性质

None Li Chun-Lei, None Zheng Jun, None Wang Xiao-Ming, None Xu Yan
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摘要

基于单电子有效质量近似理论和传递矩阵方法,研究了稀释磁性半导体/半导体超晶格中电子的自旋极化输运性质。详细讨论了光场和磁场对超晶格结构中自旋极化输运和隧穿时间的影响。结果表明,由于导带电子与掺杂Mn离子之间的sp-d电子相互作用,发生了巨大的塞曼分裂。结果表明,通过调节磁场和光场,可以控制自旋相关电子的显著自旋相关透射率和共振透射带的位置和宽度。考虑光场辐照,随着光场强度的增加,电子的共振带发生变形和展宽。在强磁场的情况下,不加光场时,低能区的透射系数(TC)几乎为零,但随着光强的增加,该区域的透射系数(TC)显著增加,即出现准束缚带。这些特征是由于电子在光照射下隧穿超晶格结构时与光场之间的能量交换。此外,光和磁场可以显著改变电子的自旋极化。在一定的磁场强度下(<i> </i>=2 T),光场显著改变了电子的自旋极化,主要影响是自旋极化平台的宽度变窄,平台两侧出现振荡峰。这种效应随着光场强度的增加而增强。然而,当磁场较强时(<i>B</i>= 5t),情况正好相反。这些结果表明,自旋极化可以被光场调制。最后,通过结构中高斯波包的演化,研究了自旋向上和自旋向下电子的隧穿时间。结果表明,隧穿时间取决于电子的自旋,并且可以看出,在超晶格结构中,自旋向下的电子的隧穿时间比自旋向上的电子短。自旋极化输运的这些显著性质可能有助于设计基于稀释磁性半导体/半导体超晶格结构的可调谐自旋滤波器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Spin-polarized transport properties in diluted-magnetic-semiconductor/semiconductor superlattices under light-field assisted
Based on the single electron effective mass approximation theory and the transfer-matrix method, the spin polarized transport properties of electrons in a diluted-magnetic-semiconductor/semiconductor superlattice are studied. The influence of a light-field and a magnetic-field on spin polarized transport and the tunneling time in the superlattice structure are discussed in more detail. The results show that, due to the sp-d electron interaction between conduction band electrons and doped Mn ions, giant Zeeman splitting occurs. It is shown that a significant spin-dependent transmission and the position and width of the resonant-transmission-band of spin-dependent electron can be manipulated by adjusting the magnetic- and light-field. Considering the light field irradiation, the resonance band of electron is deformed and broadened with the increase of the light field intensity. For the case of a strong magnetic field, the transmission coefficient (TC) in the low-energy region is almost zero when the light field is not added, but with the increase of light intensity, the TC increased significantly in the zone increases significantly, that is, a quasi-bound band appears. These features are due to the energy exchange between electrons and the light field when electrons tunnel through the superlattice structure under light irradiation. In addition, light and magnetic fields can significantly change the spin polarization of electrons. Under a certain magnetic field intensity (B=2 T), the light field significantly changes the spin polarization of electrons, the main effect is that the width of the spin polarization platform narrows and oscillatory peaks are accompanied on both sides of the platform. This effect is strengthened with the increase of the light field intensity. However, when the magnetic field is stronger (B=5 T), the opposite is true. These show that the spin polarization can be modulated by the light field. Finally, the tunneling time of spin-up and spin-down electrons is studied by the evolution of Gaussian wave packets in the structure. The results show that the tunneling time depends on a spin of electrons, and it can be seen that the tunneling time of the spin-down electron is shorter than that of the spin-up electron in the superlattice structure. These remarkable properties of spin polarized transport may be beneficial for the devising tunable spin filtering devices based on diluted magnetic semiconductor/semiconductor superlattice structure.
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