利用电容的自谐振特性抑制二次谐波的毫米波GaN MMIC功率放大器

IF 0.8 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Ieice Electronics Express Pub Date : 2023-01-01 DOI:10.1587/elex.20.20230435

Dan-Dan Teng, Xiao-Wei Zhu, Lei Zhang, Jing Xia, Rui-Jia Liu

{"title":"利用电容的自谐振特性抑制二次谐波的毫米波GaN MMIC功率放大器","authors":"Dan-Dan Teng, Xiao-Wei Zhu, Lei Zhang, Jing Xia, Rui-Jia Liu","doi":"10.1587/elex.20.20230435","DOIUrl":null,"url":null,"abstract":"In this letter, a second harmonic suppressed millimeter-wave (mm-wave) gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifier (PA) using the self-resonate characteristic of the capacitor is proposed. Based on a simple modified band-pass output matching network, a novel second harmonic suppression method by utilizing the self-resonate characteristic of the on-chip capacitor is proposed, which can realize the harmonic suppression without any additional tuning structures. For verification, a 24-to-28-GHz GaN MMIC PA was designed using a 150-nm GaN on silicon carbide high electron mobility transistor process. The fabricated PA achieved a saturated power range of 32.5-34 dBm, with a corresponding power-added efficiency (PAE) of 37.5%-44.5%. The amplifier achieved good linearity when excited by a 400-MHz orthogonal frequency division multiplexing signal after applying digital predistortion.","PeriodicalId":50387,"journal":{"name":"Ieice Electronics Express","volume":null,"pages":null},"PeriodicalIF":0.8000,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A mm-wave GaN MMIC power amplifier with second harmonic suppressed using the self-resonate characteristic of the capacitor\",\"authors\":\"Dan-Dan Teng, Xiao-Wei Zhu, Lei Zhang, Jing Xia, Rui-Jia Liu\",\"doi\":\"10.1587/elex.20.20230435\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this letter, a second harmonic suppressed millimeter-wave (mm-wave) gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifier (PA) using the self-resonate characteristic of the capacitor is proposed. Based on a simple modified band-pass output matching network, a novel second harmonic suppression method by utilizing the self-resonate characteristic of the on-chip capacitor is proposed, which can realize the harmonic suppression without any additional tuning structures. For verification, a 24-to-28-GHz GaN MMIC PA was designed using a 150-nm GaN on silicon carbide high electron mobility transistor process. The fabricated PA achieved a saturated power range of 32.5-34 dBm, with a corresponding power-added efficiency (PAE) of 37.5%-44.5%. The amplifier achieved good linearity when excited by a 400-MHz orthogonal frequency division multiplexing signal after applying digital predistortion.\",\"PeriodicalId\":50387,\"journal\":{\"name\":\"Ieice Electronics Express\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.8000,\"publicationDate\":\"2023-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Ieice Electronics Express\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1587/elex.20.20230435\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ieice Electronics Express","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1587/elex.20.20230435","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

本文提出了一种利用电容自谐振特性的二谐波抑制毫米波(mm-wave)氮化镓(GaN)单片微波集成电路(MMIC)功率放大器。基于一种简单的改进带通输出匹配网络，提出了一种利用片上电容自谐振特性的二次谐波抑制方法，该方法无需额外的调谐结构即可实现谐波抑制。为了验证这一点，我们采用150纳米碳化硅高电子迁移率晶体管工艺设计了24 ~ 28 ghz GaN MMIC放大器。所制备的PA达到了32.5-34 dBm的饱和功率范围，相应的功率附加效率(PAE)为37.5%-44.5%。采用数字预失真后，在400 mhz正交频分复用信号的激励下，放大器获得了良好的线性度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A mm-wave GaN MMIC power amplifier with second harmonic suppressed using the self-resonate characteristic of the capacitor

In this letter, a second harmonic suppressed millimeter-wave (mm-wave) gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifier (PA) using the self-resonate characteristic of the capacitor is proposed. Based on a simple modified band-pass output matching network, a novel second harmonic suppression method by utilizing the self-resonate characteristic of the on-chip capacitor is proposed, which can realize the harmonic suppression without any additional tuning structures. For verification, a 24-to-28-GHz GaN MMIC PA was designed using a 150-nm GaN on silicon carbide high electron mobility transistor process. The fabricated PA achieved a saturated power range of 32.5-34 dBm, with a corresponding power-added efficiency (PAE) of 37.5%-44.5%. The amplifier achieved good linearity when excited by a 400-MHz orthogonal frequency division multiplexing signal after applying digital predistortion.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Ieice Electronics Express 工程技术-工程：电子与电气

CiteScore

1.50

自引率

37.50%

发文量

119

审稿时长

1.1 months

期刊介绍： An aim of ELEX is rapid publication of original, peer-reviewed short papers that treat the field of modern electronics and electrical engineering. The boundaries of acceptable fields are not strictly delimited and they are flexibly varied to reflect trends of the fields. The scope of ELEX has mainly been focused on device and circuit technologies. Current appropriate topics include: - Integrated optoelectronics (lasers and optoelectronic devices, silicon photonics, planar lightwave circuits, polymer optical circuits, etc.) - Optical hardware (fiber optics, microwave photonics, optical interconnects, photonic signal processing, photonic integration and modules, optical sensing, etc.) - Electromagnetic theory - Microwave and millimeter-wave devices, circuits, and modules - THz devices, circuits and modules - Electron devices, circuits and modules (silicon, compound semiconductor, organic and novel materials) - Integrated circuits (memory, logic, analog, RF, sensor) - Power devices and circuits - Micro- or nano-electromechanical systems - Circuits and modules for storage - Superconducting electronics - Energy harvesting devices, circuits and modules - Circuits and modules for electronic displays - Circuits and modules for electronic instrumentation - Devices, circuits and modules for IoT and biomedical applications