cebr3闪烁体产光率的非比例性

IF 0.7 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Integrated Ferroelectrics Pub Date : 2023-09-29 DOI:10.1080/10584587.2023.2234569

S. Yonphan, W. Chaiphaksa, H. J. Kim, J. Kaewkhao

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引用次数: 0

摘要

摘要从光子和电子响应的角度对溴化铈(CeBr3)闪烁晶体进行了研究和分析。在光子响应测量中，辐射源的能量范围为0.356 MeV≤E≤1.332 MeV。137Cs源辐照能量为0.662 MeV，采用康普顿符合技术进行电子响应测量。变角(θ)会产生对应于30°到120°散射角的伽马能量。光电子数(Nphe)的结果显示了光子和电子响应的线性趋势。光产率随光子和电子能量的增加而增加。结果表明，光子响应和电子响应的非比例性在所有能量范围内都表现出良好的比例特性，因此，该晶体是一个有希望用于伽马或x射线探测的候选者。作者要感谢泰国国家研究委员会(NRCT)通过工业研究和研究人员(RRI)博士计划(NRCT5-RRI63015-P19)资助了这项研究。作者感谢泰国科学研究与创新(TSRI)对本研究的支持(项目编号TSRI_66_9.2)。披露声明作者未报告潜在的利益冲突。

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Non-proportionality of Light Yield of CeBr ₃ Scintillator

AbstractCerium bromide (CeBr3) scintillation crystal were studied and analyzed from the photon and electron response measurements. For photon response measurements, the radioactive source has been used for the energy range of 0.356 MeV ≤E≤ 1.332 MeV. The 137Cs source irradiated with gamma ray energy at 0.662 MeV was used for the electron response measurement using Compton coincidence technique. The variable angles (θ) would generate the gamma energies corresponding to a scattering angle of 30° to 120°. The results of number of photoelectron (Nphe) show responds to linear trends for photon and electron response. The light yield shows increase with increasing the photon and electron energy. The results showed the non-proportionality of photon response and electron response demonstrated good proportional properties of all energy ranges and as the result, the crystal is a promising candidate for gamma or X-rays detection.Keywords: Scintillation crystalnon-proportionalitylight yieldCeBr3 AcknowledgmentsThe authors would like to thank National Research Council of Thailand (NRCT) through the Research and Researchers for Industries (RRI) Ph.D. Program (NRCT5-RRI63015-P19) for funding this research. The authors express gratitude Thailand Science Research and Innovation (TSRI) for support supporting this research (Project number TSRI_66_9.2).Disclosure StatementNo potential conflict of interest was reported by the author(s).

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来源期刊

Integrated Ferroelectrics 工程技术-工程：电子与电气

CiteScore

1.40

自引率

0.00%

发文量

179

审稿时长

3 months

期刊介绍： Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.