稀土钙钛矿体系bamo3 (M = Ce, Pr和Tb)的点缺陷对介电和磁性行为的影响

IF 0.7 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Phieraya Pulphol, Yaowaluk Tariwong, Thitirat Charoonsuk, Tosapol Maluangnont, Wanwilai Vittayakorn, Rangson Muanghua, Theerachai Bongkarn, Taras Kolodiazhny, Naratip Vittayakorn
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引用次数: 0

摘要

摘要本文主要研究了稀土异价取代钙钛矿BaMO3 (M = Ce, Pr和Tb)有望表现出磁电响应。总体而言,本研究选取4f0 - BaCeO3体系在2 K以下表现出抗磁性特征,而通过MPMS磁强计测量,在TN = 11.7和33.2 K时,BaPrO3 (4f1)和BaTbO3 (4f7)表现出反铁磁性相变。在高氧分压和供体离子取代(Nb5+)下,BaMO3体系表现出与钛酸钙钛矿相似的缺陷化学性质,由ba空位补偿。在反铁磁相变区检测到双重态(BaPrO3和BaTbO3)的介电弛豫。为了检测样品的磁电响应,在介质测量时施加8特斯拉的磁场。在反铁磁相变中,BaTbO3表现出0.2%左右的适度磁电响应,而BaPrO3则没有。由Arrhenius方程得到的活化能在0.2 ~ 0.6 eV之间。我们要感谢我们的同事Usa Sukkha博士在这项研究中的帮助支持。披露声明作者未报告潜在的利益冲突。本研究由KMITL资助,批准号:KREF116501。Phieraya Pulphol的工作得到了蒙库特国王拉德克拉邦技术学院(KMITL)的财政支持。KREF146503。T. Bongkarm的工作得到了那理大学(NU)和国家科学研究与创新基金(NSRF)的支持,批准号为:R2566B002。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Point Defects in Rare-Earth Perovskite Systems BaMO 3 ( M = Ce, Pr and Tb) on Dielectric and Magnetic Behaviors
AbstractThis study focused on the rare-earth hetero-valent substituted perovskite BaMO3 (M = Ce, Pr and Tb) which expected to show magnetoelectric response. In general, diamagnetic feature is presented in the 4f 0 BaCeO3 system down to 2 K which is chosen as a reference in the study while BaPrO3 (4f 1) and BaTbO3 (4f 7) display antiferromagnetic phase transition at TN = 11.7 and 33.2 K, respectively, measured by MPMS magnetometer. At high oxygen partial pressure and donor ion-substitution (Nb5+), the BaMO3 systems demonstrate a similar defect chemistry to titanate perovskite which compensated by Ba-vacancy. Dielectric relaxation is detected for the doublet (BaPrO3 and BaTbO3) at the antiferromagnetic phase transition region. In order to examine the magnetoelectric response, the 8 Tesla of magnetic field is applied to the samples during the dielectric measurement. BaTbO3 shows a modest magnetoelectric response around 0.2% at the antiferromagnetic phase transition while that of BaPrO3 is silent. The activation energies derived from Arrhenius equation are reported to be in the range of 0.2 − 0.6 eV.Keywords: Rare-earth perovskitepoint defectmagnetoelectric AcknowledgmentsW’e would like to thank our colleagues, Dr. Usa Sukkha, for the helpful support in this research.Disclosure StatementNo potential conflict of interest was reported by the author(s).Additional informationFundingThis work was supported financially by KMITL under Grant No. KREF116501. The work of Phieraya Pulphol was supported financially by King Mongkut’s Institute of Technology Ladkrabang (KMITL) under Grant No. KREF146503. The work of T. Bongkarm was supported by Naresuan University (NU) and National Science, Research and Innovation Fund (NSRF) with Grant No. R2566B002.
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来源期刊
Integrated Ferroelectrics
Integrated Ferroelectrics 工程技术-工程:电子与电气
CiteScore
1.40
自引率
0.00%
发文量
179
审稿时长
3 months
期刊介绍: Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.
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