低维异质结构中强电场中电子输运的随机模拟

IF 0.8 Q3 STATISTICS & PROBABILITY
Evgeniya Kablukova, Karl K. Sabelfeld, Dmitry Protasov, Konstantin Zhuravlev
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引用次数: 0

摘要

摘要本文提出了一种随机模拟DA-pHEMT异质结构中电子输运的算法。给出了异质结构中电子气体输运问题的泊松方程、Schrödinger方程和动力学玻尔兹曼方程耦合系统的数学表达式。建立了考虑多谷抛物带结构的DA-pHEMT异质结构中电子输运的蒙特卡罗模型,以及电子在极性光学、谷间声子和杂质上的散射速率和散射相函数的计算公式。本文给出了求解AlGaAs / GaAs / InGaAs / GaAs / AlGaAs异质结构Poisson-Schrödinger-Boltzmann方程组的计算实验结果。计算了电子在主谷和卫星谷的能量子带分布以及电子在各谷漂移速度的场依赖关系。研究发现,由于调制掺杂杂质产生的高势垒,没有电子在宽间隙AlGaAs层中的空间转移。比较分析了电子在DA-pHEMT异质结构和InGaAs非应变层中的漂移速度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Stochastic simulation of electron transport in a strong electrical field in low-dimensional heterostructures
Abstract In this paper we develop a stochastic simulation algorithm for electron transport in a DA-pHEMT heterostructure. Mathematical formulation of the problem of electron gas transport in the heterostructure in the form of a coupled system of Poisson, Schrödinger and kinetic Boltzmann equations is given. A Monte Carlo model of electron transport in DA-pHEMT heterostructures which accounts for multivalley parabolic band structure, as well as relevant formulas for calculating electron scattering rates and scattering phase functions on polar optical, intervalley phonons and on impurities are developed. The results of a computational experiment involving the solution of the system of Poisson–Schrödinger–Boltzmann equations for the AlGaAs / GaAs / InGaAs / GaAs / AlGaAs heterostructure are presented. The distribution of electrons by energy subband in the main and satellite valleys and the field dependences of the electron drift velocity in each valley are calculated. It was discovered that there is no spatial transfer of electrons into wide-gap AlGaAs layers due to high barriers created by modulated-doped impurities. A comparative analysis of the electron drift velocities in the studied DA-pHEMT heterostructures and in the unstrained layer of the InGaAs is given.
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来源期刊
Monte Carlo Methods and Applications
Monte Carlo Methods and Applications STATISTICS & PROBABILITY-
CiteScore
1.20
自引率
22.20%
发文量
31
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