WS<sub>2</sub>的光电流响应调制具有Li嵌入的光电器件

None Song Yu-Xin, None Li Yu-Qi, None Wang Ling-Han, None Zhang Xiao-Lan, None Wang Chong, None Wang Qin-Sheng
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引用次数: 0

摘要

过渡金属二硫族化合物已成为一类突出的二维层状材料,由于其独特的结构和性质,引起了研究人员的持续关注。这些独特的特性使得过渡金属二硫族化合物在光电子学、纳米电子学、储能器件和电催化等许多领域具有高度的通用性。特别是,调节这些材料的掺杂特性的能力对于提高器件的光电响应性能起着至关重要的作用,因此研究和理解这种效应势在必行。近年来,电化学离子插层技术已经成为一种精确掺杂控制二维材料的新方法。在此基础上,本文旨在证明利用电化学离子插入方法在厚WS<sub>2</sub>层。结果表明,电导率显著提高,大约是原始值的200倍,同时通过操纵栅极电压实现了对光电响应性能的有效和可逆控制。本文的关键发现之一是成功地演示了WS<sub>2</sub>器件通过离子插入,由栅电压调节。这种动态控制机制展示了精细调谐和定制由二维材料制成的光电器件性能的潜力。实现可逆控制的能力尤其重要,因为它允许广泛的应用范围,使设备能够根据特定的要求和操作条件进行调整。这项工作的意义超出了直接的发现,并为未来研究利用离子嵌入方法使用二维材料构建的光电器件的响应控制奠定了基础。通过确定该技术在实现可控掺杂和精确调制光电响应方面的可行性和有效性,研究人员可以探索其在各个技术领域的潜在应用。此外,本研究为开发先进的掺杂策略奠定了基础,使设计和制造具有增强功能的高性能器件成为可能。总之,本工作展示了掺杂控制在过渡金属二硫化物器件中的重要性,并展示了电化学离子插入方法实现其光电响应性能精确调制的潜力。观察到的电导率的增强和可逆控制光电响应的能力突出了该技术的良好前景。最终,这项工作为二维材料领域的未来发展铺平了道路,并为改进功能和性能的光电器件的设计和优化开辟了新的途径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Modulation of photocurrent response in WS<sub>2</sub> optoelectronic devices with Li intercalation
Transition metal dichalcogenides have emerged as a prominent class of two-dimensional layered materials, capturing sustained attention from researchers due to their unique structures and properties. These distinctive characteristics render transition metal dichalcogenides highly versatile in numerous fields, including optoelectronics, nanoelectronics, energy storage devices, and electrocatalysis. In particular, the ability to modulate the doping characteristics of these materials plays a crucial role in improving the photoelectric response performance of devices, making it imperative to investigate and understand such effects.
In recent years, the electrochemical ion intercalation technique has emerged as a novel approach for precise doping control of two-dimensional materials. Building upon this advancement, this paper aims to demonstrate the effective doping control of transition metal dichalcogenides devices by utilizing the electrochemical ion intercalation method specifically on thick WS2 layers. The results reveal a remarkable enhancement in electrical conductivity, approximately 200 times higher than the original value, alongside the achievement of efficient and reversible control over the photoelectric response performance through the manipulation of gate voltage. One of the key findings of this paper is the successful demonstration of the reversible cyclic control of the photoelectric response in WS2 devices through ion intercalation, regulated by the gate voltage. This dynamic control mechanism showcases the potential for finely tuning and tailoring the performance of photoelectric devices made from two-dimensional materials. The ability to achieve reversible control is especially significant as it allows for a versatile range of applications, enabling devices to be adjusted according to specific requirements and operating conditions.
The implications of this work extend beyond the immediate findings and present a foundation for future investigations into response control of photoelectric devices constructed using two-dimensional materials through the utilization of the ion intercalation method. By establishing the feasibility and efficacy of this technique in achieving controlled doping and precise modulation of photoelectric response, researchers can explore its potential applications in various technological domains. Furthermore, this research serves as a stepping stone for the development of advanced doping strategies, enabling the design and fabrication of high-performance devices with enhanced functionalities.
In summary, this work showcases the significance of doping control in transition metal dichalcogenide devices and demonstrates the potential of the electrochemical ion intercalation method for achieving precise modulation of their photoelectric response performance. The observed enhancements in electrical conductivity and the ability to reversibly control the photoelectric response highlight the promising prospects of this technique. Ultimately, this work paves the way for future advancements in the field of two-dimensional materials and opens up new avenues for the design and optimization of photoelectric devices with improved functionality and performance.
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