降低SnO2载流子密度和减薄膜厚度提高气敏性气体传感器

Q4 Engineering

IEEJ Transactions on Sensors and Micromachines Pub Date : 2023-11-01 DOI:10.1541/ieejsmas.143.344

Ki Ando, Naoya Nishina

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引用次数: 0

摘要

本研究采用射频磁控溅射法制备了SnO2薄膜，研究了载流子密度和薄膜厚度对H2气敏性的影响。我们的目标是制造一种可以检测ppb级气体浓度的气体传感器，用于医疗保健应用。有报道称，较低的载流子密度和较薄的薄膜厚度有助于提高气体传感器的灵敏度。我们通过使用蓝宝石衬底沉积氧化锡，并对氧化锡薄膜进行退火处理，平衡了载流子密度和薄膜厚度的降低。结果表明，降低二氧化锡薄膜厚度比降低载流子密度对提高其气敏性的影响更显著。

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Improvement of Gas Sensitivity by Lowering Carrier Density and Thinning Film Thickness of SnO2 Gas Sensor

In this study, we investigated dependence of carrier density and film thickness on H2 gas sensitivity using tin dioxide (SnO2) films deposited by RF magnetron sputtering. Our aim is fabricating a gas sensor that can detect ppb-level gas concentrations for health care applications. It had been reported that lower carrier density and thinner film thickness contributed improving sensitivity of a gas sensor. We balanced lower carrier density and thinner film thickness by using a sapphire substrate for depositing tin oxide in addition to annealing treatment to tin oxide films. In the result, we clarified that thinning film thickness of tin dioxide affected on improving its gas sensitivity more significantly than lowering carrier density.

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