应变诱导的NbS2单层磁各向异性能控制:第一性原理研究

Berton Maruli Siahaan, Afrioni Roma Rio
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引用次数: 0

摘要

本文利用密度泛函理论(DFT)研究了二硫化铌(NbS2)单层结构中磁各向异性能(MAE)的应变可控性。我们的计算显示负MAE为-1.82 meV,表明自旋倾向于在平面内方向(x或y)排列。通过系统地对NbS2单层施加双轴拉伸应变,范围从1%到10%,我们观察到应变与MAE之间的线性关系。有趣的是,MAE的应变诱导调制导致了一个显著的现象,当临界应变为7%时,易磁化轴从面内方向转向面外方向。这种通过控制应变来切换磁各向异性的能力显示了NbS2单层在自旋电子器件开发中的巨大潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Strain-Induced Control of Magnetic Anisotropy Energy in NbS2 Monolayer: First-Principles Study
In this work, we investigate the strain controllability of magnetic anisotropy energy (MAE) in the monolayer form of niobium disulfide (NbS2) using density functional theory (DFT). Our calculation reveals a negative MAE of -1.82 meV, indicating a preference for spins to align in the in-plane directions (x or y). By systematically applying biaxial tensile strain to the NbS2 monolayer, ranging from 1% to 10%, we observe a linear relationship between strain and MAE. Interestingly, the strain-induced modulation of MAE leads to a remarkable phenomenon, where the easy axis of magnetization shifts from the in-plane to an out-of-plane orientation at a critical strain of 7%. This ability to switch the magnetic anisotropy by manipulating strain demonstrates the promising potential of NbS2 monolayer in the development of spintronic devices.
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