{"title":"特殊磁阻器件的通用材料趋势","authors":"Ricci Erlandsen, Thierry Désiré Pomar, Lior Kornblum, Nini Pryds, Rasmus Bjørk, Dennis Valbjørn Christensen","doi":"10.1088/2515-7639/acfac0","DOIUrl":null,"url":null,"abstract":"Abstract Extraordinary magnetoresistance (EMR) is a geometric magnetoresistance emerging in hybrid systems typically comprising a high-mobility material and a metal. Due to a field-dependent redistribution of electrical currents in these devices, the electrical resistance at room temperature can increase by 10 7 % when applying a magnetic field of 5 T. Although EMR holds considerable potential for realizing sensitive, all-electronic magnetometers, this potential is largely unmet. A key challenge is that the performance of EMR devices depends very sensitively on variations in a vast parameter space where changes in the device geometry and material properties produce widely different EMR performances. The challenge of navigating in the large parameter space is further amplified by the poor understanding of the interplay between the device geometry and material properties. By systematically varying the material parameters in four key EMR geometries using diffusive transport simulations, we here elucidate this interplay with the aim of finding universal guidelines for designing EMR devices. Common to all geometries, we find that the sensitivity scales inversely with the carrier density, while the MR reaches saturation at low carrier densities. Increasing the mobility beyond 20 000 cm 2 Vs −1 is required to observe strong EMR effects at 1 T with the optimal magnetoresistance observed for mobilities between 100 000–500 000 cm 2 Vs −1 . An interface resistance below <?CDATA $\\rho_c = 10^{-4}\\ \\Omega$?> <mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" overflow=\"scroll\"> <mml:msub> <mml:mi>ρ</mml:mi> <mml:mi>c</mml:mi> </mml:msub> <mml:mo>=</mml:mo> <mml:msup> <mml:mn>10</mml:mn> <mml:mrow> <mml:mo>−</mml:mo> <mml:mn>4</mml:mn> </mml:mrow> </mml:msup> <mml:mtext> </mml:mtext> <mml:mi mathvariant=\"normal\">Ω</mml:mi> </mml:math> cm 2 between the constituent materials in the hybrid devices was also found to be a prerequisite for very high magnetoresistances in all geometries. By further simulating several high-mobility materials at room and cryogenic temperatures, we conclude that encapsulated graphene and InSb are amongst the most promising candidates for EMR devices showing high magnetoresistance exceeding 10 7 % below 1 T at room temperature. This study paves the way for understanding how to realize EMR devices with record-high magnetoresistance and high sensitivity for detecting magnetic fields.","PeriodicalId":36054,"journal":{"name":"JPhys Materials","volume":"45 1","pages":"0"},"PeriodicalIF":4.9000,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Universal material trends in extraordinary magnetoresistive devices\",\"authors\":\"Ricci Erlandsen, Thierry Désiré Pomar, Lior Kornblum, Nini Pryds, Rasmus Bjørk, Dennis Valbjørn Christensen\",\"doi\":\"10.1088/2515-7639/acfac0\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstract Extraordinary magnetoresistance (EMR) is a geometric magnetoresistance emerging in hybrid systems typically comprising a high-mobility material and a metal. Due to a field-dependent redistribution of electrical currents in these devices, the electrical resistance at room temperature can increase by 10 7 % when applying a magnetic field of 5 T. Although EMR holds considerable potential for realizing sensitive, all-electronic magnetometers, this potential is largely unmet. A key challenge is that the performance of EMR devices depends very sensitively on variations in a vast parameter space where changes in the device geometry and material properties produce widely different EMR performances. The challenge of navigating in the large parameter space is further amplified by the poor understanding of the interplay between the device geometry and material properties. By systematically varying the material parameters in four key EMR geometries using diffusive transport simulations, we here elucidate this interplay with the aim of finding universal guidelines for designing EMR devices. Common to all geometries, we find that the sensitivity scales inversely with the carrier density, while the MR reaches saturation at low carrier densities. Increasing the mobility beyond 20 000 cm 2 Vs −1 is required to observe strong EMR effects at 1 T with the optimal magnetoresistance observed for mobilities between 100 000–500 000 cm 2 Vs −1 . An interface resistance below <?CDATA $\\\\rho_c = 10^{-4}\\\\ \\\\Omega$?> <mml:math xmlns:mml=\\\"http://www.w3.org/1998/Math/MathML\\\" overflow=\\\"scroll\\\"> <mml:msub> <mml:mi>ρ</mml:mi> <mml:mi>c</mml:mi> </mml:msub> <mml:mo>=</mml:mo> <mml:msup> <mml:mn>10</mml:mn> <mml:mrow> <mml:mo>−</mml:mo> <mml:mn>4</mml:mn> </mml:mrow> </mml:msup> <mml:mtext> </mml:mtext> <mml:mi mathvariant=\\\"normal\\\">Ω</mml:mi> </mml:math> cm 2 between the constituent materials in the hybrid devices was also found to be a prerequisite for very high magnetoresistances in all geometries. By further simulating several high-mobility materials at room and cryogenic temperatures, we conclude that encapsulated graphene and InSb are amongst the most promising candidates for EMR devices showing high magnetoresistance exceeding 10 7 % below 1 T at room temperature. This study paves the way for understanding how to realize EMR devices with record-high magnetoresistance and high sensitivity for detecting magnetic fields.\",\"PeriodicalId\":36054,\"journal\":{\"name\":\"JPhys Materials\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":4.9000,\"publicationDate\":\"2023-09-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"JPhys Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1088/2515-7639/acfac0\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"JPhys Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/2515-7639/acfac0","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
异常磁阻(EMR)是一种出现在混合系统中的几何磁阻,通常由高迁移率材料和金属组成。由于这些器件中电流的场依赖性再分布,当施加5 t的磁场时,室温下的电阻可以增加10.7%。尽管EMR具有实现灵敏的全电子磁强计的巨大潜力,但这一潜力在很大程度上没有得到满足。一个关键的挑战是,EMR器件的性能非常敏感地取决于巨大参数空间的变化,其中器件几何形状和材料特性的变化会产生截然不同的EMR性能。由于对器件几何形状和材料特性之间相互作用的理解不足,在大参数空间中导航的挑战进一步扩大。通过使用扩散输运模拟系统地改变四种关键EMR几何形状中的材料参数,我们在这里阐明了这种相互作用,目的是找到设计EMR器件的通用指南。与所有几何形状一样,我们发现灵敏度与载流子密度成反比,而MR在低载流子密度下达到饱和。要在1 T下观察到强EMR效应,需要将迁移率提高到20,000 cm 2 v−1以上,而在100,000 - 500,000 cm 2 v−1之间的迁移率观察到最佳磁电阻。混合器件中组成材料之间的界面电阻低于ρ c = 10−4 Ω cm 2,这也是在所有几何形状中获得非常高磁阻的先决条件。通过进一步在室温和低温下模拟几种高迁移率材料,我们得出结论,封装石墨烯和InSb是EMR器件最有希望的候选者之一,在室温下,在1 T以下显示出超过10.7%的高磁阻。该研究为了解如何实现具有创纪录高磁阻和高灵敏度的EMR器件奠定了基础。
Universal material trends in extraordinary magnetoresistive devices
Abstract Extraordinary magnetoresistance (EMR) is a geometric magnetoresistance emerging in hybrid systems typically comprising a high-mobility material and a metal. Due to a field-dependent redistribution of electrical currents in these devices, the electrical resistance at room temperature can increase by 10 7 % when applying a magnetic field of 5 T. Although EMR holds considerable potential for realizing sensitive, all-electronic magnetometers, this potential is largely unmet. A key challenge is that the performance of EMR devices depends very sensitively on variations in a vast parameter space where changes in the device geometry and material properties produce widely different EMR performances. The challenge of navigating in the large parameter space is further amplified by the poor understanding of the interplay between the device geometry and material properties. By systematically varying the material parameters in four key EMR geometries using diffusive transport simulations, we here elucidate this interplay with the aim of finding universal guidelines for designing EMR devices. Common to all geometries, we find that the sensitivity scales inversely with the carrier density, while the MR reaches saturation at low carrier densities. Increasing the mobility beyond 20 000 cm 2 Vs −1 is required to observe strong EMR effects at 1 T with the optimal magnetoresistance observed for mobilities between 100 000–500 000 cm 2 Vs −1 . An interface resistance below ρc=10−4Ω cm 2 between the constituent materials in the hybrid devices was also found to be a prerequisite for very high magnetoresistances in all geometries. By further simulating several high-mobility materials at room and cryogenic temperatures, we conclude that encapsulated graphene and InSb are amongst the most promising candidates for EMR devices showing high magnetoresistance exceeding 10 7 % below 1 T at room temperature. This study paves the way for understanding how to realize EMR devices with record-high magnetoresistance and high sensitivity for detecting magnetic fields.