{"title":"厚掺杂层对EBCMOS器件p型硅衬底电荷收集效率的影响","authors":"Xulei Qin, Qidong Shi, Feng Shi, Ye Li, De Song","doi":"10.1166/jno.2023.3475","DOIUrl":null,"url":null,"abstract":"In order to improve the charge collection efficiency of EBCMOS, we predicted and experimentally confirmed the doping structure of the electron multiplication layer. In this study, we simulate the charge collection efficiency of EBCMOS using various doping strategies by modeling the collisional scattering of electrons with solid atoms in semiconductor materials and combining the travel paths of electrons in the electron multiplication layer. The simulation findings demonstrate that the electric field distribution in EBCMOS could be optimized by using a layered doping structure to decrease the thickness of the index strongly doped layer. The enhanced doping structure directly contributes to the enhanced charge collecting efficiency. Based on the results of the simulations, doped samples were created and evaluated. The charge collection efficiency of EBCMOS devices might be significantly increased by decreasing the thickness of the index highly doped layer to 0.1 μ m, reaching 86.27%. The testing was done on a 7 μ m thick P-type silicon substrate with a 1 μ m thick index highly doped layer.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.6000,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The Impact of a Thick-Doping-Layer on the Charge Collection Efficiency in the P-Type Silicon Substrate of EBCMOS Devices\",\"authors\":\"Xulei Qin, Qidong Shi, Feng Shi, Ye Li, De Song\",\"doi\":\"10.1166/jno.2023.3475\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In order to improve the charge collection efficiency of EBCMOS, we predicted and experimentally confirmed the doping structure of the electron multiplication layer. In this study, we simulate the charge collection efficiency of EBCMOS using various doping strategies by modeling the collisional scattering of electrons with solid atoms in semiconductor materials and combining the travel paths of electrons in the electron multiplication layer. The simulation findings demonstrate that the electric field distribution in EBCMOS could be optimized by using a layered doping structure to decrease the thickness of the index strongly doped layer. The enhanced doping structure directly contributes to the enhanced charge collecting efficiency. Based on the results of the simulations, doped samples were created and evaluated. The charge collection efficiency of EBCMOS devices might be significantly increased by decreasing the thickness of the index highly doped layer to 0.1 μ m, reaching 86.27%. The testing was done on a 7 μ m thick P-type silicon substrate with a 1 μ m thick index highly doped layer.\",\"PeriodicalId\":16446,\"journal\":{\"name\":\"Journal of Nanoelectronics and Optoelectronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2023-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Nanoelectronics and Optoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1166/jno.2023.3475\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Nanoelectronics and Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1166/jno.2023.3475","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
The Impact of a Thick-Doping-Layer on the Charge Collection Efficiency in the P-Type Silicon Substrate of EBCMOS Devices
In order to improve the charge collection efficiency of EBCMOS, we predicted and experimentally confirmed the doping structure of the electron multiplication layer. In this study, we simulate the charge collection efficiency of EBCMOS using various doping strategies by modeling the collisional scattering of electrons with solid atoms in semiconductor materials and combining the travel paths of electrons in the electron multiplication layer. The simulation findings demonstrate that the electric field distribution in EBCMOS could be optimized by using a layered doping structure to decrease the thickness of the index strongly doped layer. The enhanced doping structure directly contributes to the enhanced charge collecting efficiency. Based on the results of the simulations, doped samples were created and evaluated. The charge collection efficiency of EBCMOS devices might be significantly increased by decreasing the thickness of the index highly doped layer to 0.1 μ m, reaching 86.27%. The testing was done on a 7 μ m thick P-type silicon substrate with a 1 μ m thick index highly doped layer.