厚掺杂层对EBCMOS器件p型硅衬底电荷收集效率的影响

IF 0.6 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Xulei Qin, Qidong Shi, Feng Shi, Ye Li, De Song
{"title":"厚掺杂层对EBCMOS器件p型硅衬底电荷收集效率的影响","authors":"Xulei Qin, Qidong Shi, Feng Shi, Ye Li, De Song","doi":"10.1166/jno.2023.3475","DOIUrl":null,"url":null,"abstract":"In order to improve the charge collection efficiency of EBCMOS, we predicted and experimentally confirmed the doping structure of the electron multiplication layer. In this study, we simulate the charge collection efficiency of EBCMOS using various doping strategies by modeling the collisional scattering of electrons with solid atoms in semiconductor materials and combining the travel paths of electrons in the electron multiplication layer. The simulation findings demonstrate that the electric field distribution in EBCMOS could be optimized by using a layered doping structure to decrease the thickness of the index strongly doped layer. The enhanced doping structure directly contributes to the enhanced charge collecting efficiency. Based on the results of the simulations, doped samples were created and evaluated. The charge collection efficiency of EBCMOS devices might be significantly increased by decreasing the thickness of the index highly doped layer to 0.1 μ m, reaching 86.27%. The testing was done on a 7 μ m thick P-type silicon substrate with a 1 μ m thick index highly doped layer.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.6000,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The Impact of a Thick-Doping-Layer on the Charge Collection Efficiency in the P-Type Silicon Substrate of EBCMOS Devices\",\"authors\":\"Xulei Qin, Qidong Shi, Feng Shi, Ye Li, De Song\",\"doi\":\"10.1166/jno.2023.3475\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In order to improve the charge collection efficiency of EBCMOS, we predicted and experimentally confirmed the doping structure of the electron multiplication layer. In this study, we simulate the charge collection efficiency of EBCMOS using various doping strategies by modeling the collisional scattering of electrons with solid atoms in semiconductor materials and combining the travel paths of electrons in the electron multiplication layer. The simulation findings demonstrate that the electric field distribution in EBCMOS could be optimized by using a layered doping structure to decrease the thickness of the index strongly doped layer. The enhanced doping structure directly contributes to the enhanced charge collecting efficiency. Based on the results of the simulations, doped samples were created and evaluated. The charge collection efficiency of EBCMOS devices might be significantly increased by decreasing the thickness of the index highly doped layer to 0.1 μ m, reaching 86.27%. The testing was done on a 7 μ m thick P-type silicon substrate with a 1 μ m thick index highly doped layer.\",\"PeriodicalId\":16446,\"journal\":{\"name\":\"Journal of Nanoelectronics and Optoelectronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2023-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Nanoelectronics and Optoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1166/jno.2023.3475\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Nanoelectronics and Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1166/jno.2023.3475","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

为了提高EBCMOS的电荷收集效率,我们预测并实验证实了电子倍增层的掺杂结构。在本研究中,我们通过模拟半导体材料中电子与固体原子的碰撞散射,结合电子在电子倍增层中的运动路径,模拟了不同掺杂策略下EBCMOS的电荷收集效率。仿真结果表明,采用层状掺杂结构减小指数强掺杂层的厚度可以优化EBCMOS中的电场分布。增强的掺杂结构直接促进了电荷收集效率的提高。根据模拟结果,制作并评价了掺杂样品。将指数高掺杂层厚度减小到0.1 μ m,可显著提高EBCMOS器件的电荷收集效率,达到86.27%。测试在7 μ m厚的p型硅衬底上进行,衬底上有1 μ m厚的折射率高掺杂层。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The Impact of a Thick-Doping-Layer on the Charge Collection Efficiency in the P-Type Silicon Substrate of EBCMOS Devices
In order to improve the charge collection efficiency of EBCMOS, we predicted and experimentally confirmed the doping structure of the electron multiplication layer. In this study, we simulate the charge collection efficiency of EBCMOS using various doping strategies by modeling the collisional scattering of electrons with solid atoms in semiconductor materials and combining the travel paths of electrons in the electron multiplication layer. The simulation findings demonstrate that the electric field distribution in EBCMOS could be optimized by using a layered doping structure to decrease the thickness of the index strongly doped layer. The enhanced doping structure directly contributes to the enhanced charge collecting efficiency. Based on the results of the simulations, doped samples were created and evaluated. The charge collection efficiency of EBCMOS devices might be significantly increased by decreasing the thickness of the index highly doped layer to 0.1 μ m, reaching 86.27%. The testing was done on a 7 μ m thick P-type silicon substrate with a 1 μ m thick index highly doped layer.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Journal of Nanoelectronics and Optoelectronics
Journal of Nanoelectronics and Optoelectronics 工程技术-工程:电子与电气
自引率
16.70%
发文量
48
审稿时长
12.5 months
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信