P‐67:GaN基绿色微型LED的光电性能研究

Mengyuan Zhanghu, Zhaojun Liu
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摘要

GaN基发光二极管(LED)阵列是一种具有广泛应用前景的技术。在GaN基LED中,温度依赖性能的研究是非常重要的。显示应用仍然是基于GaN的led的焦点,特别是高清晰度(HD)显示。研究绿色微LED器件对高清显示具有重要意义。我们研究了80μm绿色Micro - LED器件的性能问题,包括不同温度下的理想因数、载流子浓度分布和光学性能。这项研究有助于理解和制造高性能的绿色微型LED器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
P‐67: Research of photoelectric performance GaN based green Micro‐LED
GaN‐based light‐emitting diode (LED) arrays are a promising technology in a wide range of applications. Research on temperature dependence performance is important in GaN‐ based LED. Display applications are still the focus of GaN‐ based LEDs, especially high‐definition (HD) displays. It is of great importance for HD display to researching green Micro‐LED device. we study the performance issues of 80μm green Micro‐LED devices include ideality factor at different temperatures, carrier concentration distribution, and optical properties. This research can help understand and fabrication high‐performance green Micro‐LED devices.
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