三极管中温热处理BCP同轴腔的研究

P. Kolb, Z. Yao, A. Blackburn, R. Gregory, D. Hedji, M. McMullin, T. Junginger, R. E. Laxdal
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引用次数: 0

摘要

在250°C到400°C范围内对超导射频(SRF)腔进行中t热处理,可以提供高质量因子,在高频,电抛光(EP),椭圆腔中工作在2k,类似于氮掺杂腔中,随射频场强度的增加而增加。质量因数的上升归因于表面电阻R BCS的温度依赖部分的减少。到目前为止,在四分之一波谐振器(QWR)和半波谐振器(HWR)上的这些新治疗方法尚未见报道。TRIUMF多模同轴腔是专用的测试腔,允许在不改变环境的情况下对频率和温度进行处理性能表征,因此提供了一个出色的测试工具,可以在200至1200 MHz的射频频率范围内测试这些新的处理。在本文中,报告了QWR和HWR腔的性能测量,并比较了四种不同处理的性能:基线,常规120°C低温烘烤48小时,以及两种中温烘烤300°C和400°C 3小时。此外,还展示了使用SEM, EDX和SIMS对见证样品进行的样品分析。研究发现,中温烘烤不能直接转移到低频腔中。在两个测试腔的基模中,没有观察到比基线处理更大的性能增益,也没有观察到随射频振幅上升而降低的温度依赖分量。在1 GHz以上的频率和较低的温度下,与基线和120°C处理相比,中t烘焙对R BCS的场依赖性降低。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Mid-T heat treatments on BCP’ed coaxial cavities at TRIUMF
Mid-T heat treatments in the range from 250°C to 400°C on superconducting radio-frequency (SRF) cavities have been shown to provide high quality factors that rise with applied rf field strength in high frequency, electro-polished (EP), elliptical cavities operating at 2 K, similar to nitrogen doped cavities. The rise in quality factor is attributed to a decrease in the temperature dependent part of the surface resistance R BCS . Until now, no results have been reported for these new treatments on quarter-wave resonators (QWR) and half-wave resonators (HWR). The TRIUMF multi-mode coaxial cavities are dedicated test cavities that allow frequency and temperature resolved performance characterization of treatments without changing environments, therefore providing an excellent test vehicle to test these new treatments with rf frequencies ranging from 200 to 1,200 MHz. In this paper, performance measurements from both QWR and HWR cavities are reported and their performance compared with four different treatments: baseline, a conventional 120°C low temperature bake for 48 h, and two mid-T bakes at 300°C and 400°C for 3 h. In addition, sample analysis using SEM, EDX and SIMS of witness samples is also shown. It is found that the mid-T bakes are not directly transferable to low frequency cavities. In the fundamental modes of the two test cavities, no performance gain over the baseline treatment nor a decreasing temperature dependent component with rising rf amplitude was observed. At frequencies above 1 GHz and low temperatures, the mid-T bakes show a reduced field dependence of R BCS compared to both the baseline and 120°C treatments.
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