{"title":"cr掺杂β-Ga2O3薄膜的发光特性","authors":"O.M. Bordun, B.O. Bordun, I.Yo. Kukharskyy, D.M. Maksymchuk, I.I. Medvid","doi":"10.15330/pcss.24.3.490-494","DOIUrl":null,"url":null,"abstract":"The results of investigation of optical excitation, photoluminescence (PL) and cathodoluminescence (CL) spectra in Cr-doped β-Ga2O3 thin films are presented. The broad bands due to the generation of electron-hole pairs and transitions from the 4А2 ground level to the 4Т1 and 4Т2 excited states in Cr3+ ions are observed in the photoexcitation spectra. The R-lines and phonon repetitions of R-lines are observed on the luminescence spectra against the background of a broad structureless band with a maximum around 700 nm, caused by the 4T2 – 4A2 transitions in Cr3+ ions. The crystal field force Dq was determined and the Stokes and anti-Stokes repetitions of R-lines were interpreted.","PeriodicalId":20137,"journal":{"name":"Physics and Chemistry of Solid State","volume":"27 1","pages":"0"},"PeriodicalIF":0.9000,"publicationDate":"2023-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Luminescence of Cr-doped β-Ga2O3 thin films\",\"authors\":\"O.M. Bordun, B.O. Bordun, I.Yo. Kukharskyy, D.M. Maksymchuk, I.I. Medvid\",\"doi\":\"10.15330/pcss.24.3.490-494\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The results of investigation of optical excitation, photoluminescence (PL) and cathodoluminescence (CL) spectra in Cr-doped β-Ga2O3 thin films are presented. The broad bands due to the generation of electron-hole pairs and transitions from the 4А2 ground level to the 4Т1 and 4Т2 excited states in Cr3+ ions are observed in the photoexcitation spectra. The R-lines and phonon repetitions of R-lines are observed on the luminescence spectra against the background of a broad structureless band with a maximum around 700 nm, caused by the 4T2 – 4A2 transitions in Cr3+ ions. The crystal field force Dq was determined and the Stokes and anti-Stokes repetitions of R-lines were interpreted.\",\"PeriodicalId\":20137,\"journal\":{\"name\":\"Physics and Chemistry of Solid State\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.9000,\"publicationDate\":\"2023-09-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physics and Chemistry of Solid State\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.15330/pcss.24.3.490-494\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physics and Chemistry of Solid State","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.15330/pcss.24.3.490-494","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
The results of investigation of optical excitation, photoluminescence (PL) and cathodoluminescence (CL) spectra in Cr-doped β-Ga2O3 thin films are presented. The broad bands due to the generation of electron-hole pairs and transitions from the 4А2 ground level to the 4Т1 and 4Т2 excited states in Cr3+ ions are observed in the photoexcitation spectra. The R-lines and phonon repetitions of R-lines are observed on the luminescence spectra against the background of a broad structureless band with a maximum around 700 nm, caused by the 4T2 – 4A2 transitions in Cr3+ ions. The crystal field force Dq was determined and the Stokes and anti-Stokes repetitions of R-lines were interpreted.
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