光迹法模拟光伏硅用抗反射TiO2/SiO2涂层

Siti Hajar Mohmad Salleh
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引用次数: 0

摘要

在太阳能系统中,使用抗反射涂层来减少反射并提高效率。然而,太阳能电池的前表面单独是无效的,因为大部分来自太阳的光被反射,很少有能量被吸收到太阳能电池中。足够厚度的减反射涂层可以大大降低前表面反射率。另一方面,纳米级表面纹理可以有效地捕获更高比例的入射光,从而提高光学吸收。在本研究中,为了提高硅太阳能电池的整体效率,采用了300 ~ 1200nm波长范围内的光捕获方案。由于TiO2和SiO2的折射率不同(TiO2折射率高,SiO2折射率低),将厚度不同的薄层TiO2和SiO2交替堆叠。本研究采用正入射太阳辐照光谱AM1.5G。在光线追踪模拟中,研究了具有不同厚度的多层电弧的前平面,以获得光学性能和电流密度的最佳值。对SiO2和TiO2的四种组合方式进行了评价,并计算了最大电位光电流密度(Jmax)。薄晶硅c-Si(无电弧)的Jmax值为24.93 mA/cm2,在前表面加电弧后,Jmax值提高到30.28 mA/cm2。与c-Si参考的Jmax相比,增加了21.46%。通过光线追踪模拟硅光伏应用中的抗反射TiO2/SiO2涂层imran Al-Haqeem Bin Jaffar1, Siti Hajar mohammad salle2 *, Mohd Zaki Mohd Yusoff31,2马来西亚玛拉理工大学应用科学学院,Cawangan Perlis, Campus Arau, 02600 Perlis, Malaysia . 3马来西亚玛拉理工大学应用科学学院,40450 Shah Alam, Selangor, Malaysia*通讯作者E-mail: sitiha2902@uitm.edu.myReceived: 2022年8月8日接收:2023年2月17日在线第一:2023年3月17日
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Simulation of Anti-Reflective TiO2/SiO2 Coating for Silicon Photovoltaic Application by Ray Tracing
n solar systems, anti-reflective coatings are used to reduce reflection and increase efficiency. However, the front surface on the solar cells alone is not effective because most of the light from the sun is reflected and very less energy absorption into the solar cells occur. An anti-reflective coating (ARC) of a sufficient thickness can greatly reduce front surface reflectance. Nanoscale surface texturing, on the other hand, can efficiently capture a higher ratio of incident light to boost optical absorption. In this study, the light trapping scheme within the wavelength of 300 to 1200 nm was used to improve the overall efficiency of silicon solar cells. A thin layer of TiO2 and SiO2 anti-reflective coating with different thicknesses was stacked alternatingly due to their different refractive index with TiO2 having a high refractive index and SiO2 with a low refractive index. Solar irradiance spectrum AM1.5G at normal incidence was used in this present work. For the ray-tracing simulation, the front planar with multilayer ARC with different thicknesses were investigated to obtain the optimum value for optical properties and current density. All the four combination arrangements of SiO2 and TiO2 were evaluated and the maximum potential photocurrent density (Jmax) was calculated. The Jmax value of thin crystalline silicon, c-Si (without ARC) was 24.93 mA/cm2 and increased to 30.28 mA/cm2when ARC was used on the front surface. This represents an increasing of 21.46 % enhancement compared to the Jmax of the c-Si reference. Simulation of Anti-Reflective TiO2/SiO2 Coating for Silicon Photovoltaic Application by Ray TracingImran Al-Haqeem Bin Jaffar1, Siti Hajar Mohmad Salleh2*, Mohd Zaki Mohd Yusoff31,2Faculty of Applied Sciences, Universiti Teknologi MARA, Cawangan Perlis, Campus Arau, 02600 Perlis, Malaysia3Faculty of Applied Science, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia*Corresponding author’s E-mail: sitiha2902@uitm.edu.myReceived: 08 August 2022 Accepted: 17 February 2023Online First: 17 March 2023
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