{"title":"有源电路生存性仿真","authors":"L. Wiederspahn, K. Chung, J. Canyon","doi":"10.1109/AERO.1996.495900","DOIUrl":null,"url":null,"abstract":"A new method has been developed to predict survivability thresholds of HEMT active devices under large RF drive. HEMT MMIC circuit survivability levels have been accurately determined for a 6-9 and a 9-18 GHz LNA.","PeriodicalId":262646,"journal":{"name":"1996 IEEE Aerospace Applications Conference. Proceedings","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Simulation of active circuit survivability\",\"authors\":\"L. Wiederspahn, K. Chung, J. Canyon\",\"doi\":\"10.1109/AERO.1996.495900\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new method has been developed to predict survivability thresholds of HEMT active devices under large RF drive. HEMT MMIC circuit survivability levels have been accurately determined for a 6-9 and a 9-18 GHz LNA.\",\"PeriodicalId\":262646,\"journal\":{\"name\":\"1996 IEEE Aerospace Applications Conference. Proceedings\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-02-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 IEEE Aerospace Applications Conference. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AERO.1996.495900\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 IEEE Aerospace Applications Conference. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AERO.1996.495900","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new method has been developed to predict survivability thresholds of HEMT active devices under large RF drive. HEMT MMIC circuit survivability levels have been accurately determined for a 6-9 and a 9-18 GHz LNA.
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