基于65nm CMOS技术的40ps低功耗两级动态比较器设计与分析

R. Ghasemi, Hossein Ghasemian, E. Abiri, M. Salehi
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引用次数: 0

摘要

本文提出了一种实现高速高精度两级比较器的新结构。在提供的比较器的第一阶段采用正反馈以减少延迟时间。此外,通过在复位模式下的每级差分输出节点之间使用NMOS晶体管,提高了比较速度。此外,所提供的比较器的第二阶段以预设的延迟激活,以提高比较的速度和准确性。此外,通过在两级比较器之间使用中间晶体管,提高了延迟时间和比较精度。提取了该比较器的延迟方程和偏移方程,并识别了降低它们的主要贡献者。该电路在65nm CMOS工艺下进行了仿真。后置结果表明,该比较器的总延时为40 ps,输入参考偏置电压的标准差为5.69 mV。该比较器功耗为395.3 μW @ 6 GHz和38 μW @ 1 GHz,单电源电压为1.2 V。该比较器的面积为115.92 μm2 (12.6 μ mx 9.2 μm)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design and Analysis of a Low-Power Two-Stage Dynamic Comparator with 40ps Delay in 65nm CMOS Technology
In this paper, a new structure is presented to realize a high-speed high-precision two-stage comparator. Positive feedback is employed in the first stage of the offered comparator to reduce the delay time. Furthermore, by using an NMOS transistor between the differential output nodes of each stage in the reset mode, the comparison speed is enhanced. Moreover, the second stage of the offered comparator is activated with a preset delay to improve the speed and accuracy of the comparison. Furthermore, by using intermediate transistors between the two stages of the comparator, the delay time and the comparison accuracy is also improved. The delay and offset equations of this comparator are also extracted, and the main contributors in decreasing them are recognized. The proposed circuit is simulated in 65 nm CMOS technology. The post-layout results show that the total delay and standard deviation of input-referred offset voltage of this comparator are 40 ps and 5.69 mV, respectively. This comparator consumes 395.3 μW @ 6 GHz and 38 μW @ 1 GHz with a single supply voltage of 1.2 V. Moreover, the proposed comparator occupies the area of 115.92 μm2 (12.6 μm× 9.2 μm).
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