具有创新200nm纳米环形MTJ的4Kb STT-MRAM的设计与实现

Proceedings of the 2016 International Symposium on Low Power Electronics and Design Pub Date : 2016-08-08 DOI:10.1145/2934583.2934611

Zheng Li, Xiuyuan Bi, Hai Helen Li, Yiran Chen, J. Qin, Peng Guo, W. Kong, W. Zhan, Xiufeng Han, Hong Zhang, Lingling Wang, Guanping Wu, Hanming Wu

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引用次数: 2

摘要

可编程性是发展自旋传递转矩磁随机存储器(STT-MRAM)的一个严峻挑战。理论分析表明，与传统的椭圆型磁隧结(E-MTJ)相比，纳米环形磁隧结(NR-MTJ)具有更低的写入电流和更高的写入可靠性。在本工作中，我们成功地在商业制造设施中对外径为200nm、内径为120nm的NR-MTJ进行了图像化，并设计和制造了一个4Kb的带有NR-MTJ的STT-MRAM测试芯片。测试结果证明了我们的芯片成功的读写功能，并证明了神学预测的NR-MTJs的电学特性。

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Design and Implementation of a 4Kb STT-MRAM with Innovative 200nm Nano-ring Shaped MTJ

Programmability is as a severe challenge in development of spin-transfer torque magnetic random access memory (STT-MRAM). Theoretical analysis have indicated that nano-ring shaped magnetic tunneling junction (NR-MTJ) can achieve lower write current and higher write reliability compared to conventional elliptical-shaped MTJ (E-MTJ). In this work, we successfully patterned the NR-MTJ with 200nm outer diameter and 120nm inner diameter in commercial manufacturing facility, designed and fabricated a 4Kb STT-MRAM test chip with NR-MTJs. Testing results demonstrated successful read and write functionalities of our chip, and proved the theocratically-predicted electrical properties of NR-MTJs.

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Proceedings of the 2016 International Symposium on Low Power Electronics and Design

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