阻尼和电压相关漏阻对中频电源噪声的影响

B. Garben, A. Paech
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引用次数: 4

摘要

准确的功率/地噪声预测对于充分的芯片和封装设计至关重要。本文重点研究了阻尼和泄漏对逻辑电路开关活度变化引起的中频功率噪声的影响。噪声是通过仿真确定的,并通过一个封闭的形式表达式来计算,该表达式是由芯片和封装供电网络的简化二维电路表示推导出来的。两种方法的一致性都在16%以内。当功率噪声由片上电容与下一阶段去耦电容之间的谐振决定时,发现泄漏电阻的电压依赖性对功率噪声至关重要。结果表明,阻尼和泄漏显著降低了片上去耦电容和封装电容电感对中频功率噪声的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Influence of damping and voltage dependent leakage resistance on mid-frequency power noise
Accurate predictions of power/ground-noise are essential for adequate chip and package design. This paper studies especially the influence of damping and leakage on the mid-frequency power noise caused by switching activity variations of logic circuits. The noise is determined by simulations and calculated by a closed form expression which is derived for a simplified 2D circuit representation of the chip and package power delivery network. Both approaches agree within 16%. The voltage dependency of the leakage resistance is found to be essential for the power noise when the noise is determined by the resonance between on-die capacitors and the next stage of decoupling capacitors. It is shown that damping and leakage reduce significantly the influence of the on-die decoupling capacitance and package capacitor inductance on the mid-frequency power noise.
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