先进的毫米波集成电路和应用

2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks Pub Date : 1900-01-01 DOI:10.1109/RFIT.2005.1598870

M. Schlechtweg, A. Tessmann, A. Leuther, C. Schw, H. Massler, M. Mikulla, Martin Walther, M. Riessle

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引用次数: 6

摘要

提出了基于4" GaAs衬底上的变质InAlAs/InGaAs hemt的毫米波应用的高性能集成电路和模块。在50 nm栅极长度器件上实现了410 GHz的外部传输频率。集成电路工艺在晶体管和电路水平上都具有高成品率。两级低噪声放大器在94 GHz时的信号增益为20 dB，噪声系数为2.4 dB。为g频段工作开发的MMIC放大器在220 GHz时的增益为21 dB。讨论了具有低噪声性能的高增益模块，可实现新的应用，例如高达220 GHz的毫米波成像。

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Advanced mm-wave ICs and applications

High performance integrated circuits and modules for millimeter-wave applications based on metamorphic InAlAs/InGaAs HEMTs on 4" GaAs substrates are presented. An extrinsic transit frequency of 410 GHz for 50 nm gate length devices is achieved. The IC process features high yield on both transistor and circuit levels. Two-stage low-noise amplifiers demonstrate a small signal gain of 20 dB and a noise figure of 2.4 dB at 94 GHz. An amplifier MMIC developed for G-band operation exhibits a gain of 21 dB at 220 GHz. High-gain modules featuring low-noise performance are discussed which enable novel applications, such as millimeter-wave imaging up to 220 GHz.

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2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks

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