退火对硫处理n-GaAs的Shottky势垒参数的影响

2009 International Siberian Conference on Control and Communications Pub Date : 2009-03-27 DOI:10.1109/SIBCON.2009.5044861

E. Erofeev, V. Kagadei, T.V. Zaretzkaya

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引用次数: 0

摘要

研究了Ti/Au对硫处理n-GaAs(100)势垒的热退火(300-380µC, 5 min)对其参数的影响。结果表明，退火温度影响势垒高度、电流-电压理想因数和100µA时的反向电压。确定了最佳退火温度。

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Influence of the annealing on the parameters of Shottky barriers to sulfur treated n-GaAs

Effect of the thermal annealing (300–380µC, 5 min) of Ti/Au barriers to sulfur treated n-GaAs (100) on its parameters was studied. It was shown that the annealing temperature influences the height of barrier, the current-voltage ideality factor and the reverse voltage at 100 µA. The optimal annealing temperature was defined.

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2009 International Siberian Conference on Control and Communications

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