$0.13 \mu \ mathm {m}$ CMOS的低抖动单片MEMS薄膜SAW振荡器

Ahmad El-Hemeily, S. Ibrahim, M. Atef, Ali Fawzy, Mostafa Essawy, Eslam Helal, E. Saad, Ayman Ahmed, Eloi MarigoFerrer, M. Soundarapandian, Arjun KumarKantimahanti
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引用次数: 0

摘要

本文介绍了基于集成微机电系统(MEMS) SAW谐振器的单片低抖动薄膜表面声波(TFSAW)振荡器的设计和测量,该谐振器是基于标准$0.13-\mu \mathrm{m}$ CMOS技术[1]开发的。所有振荡器电路都放置在SAW谐振器下,以实现高效的面积利用率,从而实现紧凑、低成本、高度集成的解决方案。该振荡器振荡频率为323 MHz,功耗为10.5 mW。在10khz偏置频率下,振荡器的相位噪声测量值为- 121 dBc/Hz,本底噪声测量值为- 146 dBc/Hz。从12 kHz到20 MHz的集成相位抖动小于160 fs。对于5 mW的低功耗,在10 khz偏置频率下,相位噪声性能为- 118 dBc/Hz,本底噪声为- 142 dBc/Hz,综合相位抖动为212 fs。这种性能允许开发基于MEMS SAW振荡器的高性能低抖动高集成低成本时钟解决方案,取代传统的石英晶体和基于SAW的离散解决方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Low Jitter Monolithic MEMS Thin Film SAW Oscillator in $0.13 \mu \mathrm{m}$ CMOS
The design and measurement of a monolithic low-jitter thin-film surface-acoustic-wave (TFSAW) based oscillator employing an integrated micro-electromechanical systems (MEMS) SAW resonator developed on top of a standard $0.13-\mu \mathrm{m}$ CMOS technology [1] are presented. All oscillator circuitry is placed under the SAW resonator for efficient area utilization enabling a compact low-cost highly-integrated solution. The oscillator has an oscillation frequency of 323 MHz and power dissipation of 10.5 mW. Measured phase noise performance of the oscillator is −121 dBc/Hz at 10-kHz offset frequency and measured noise floor is a −146 dBc/Hz. The integrated phase jitter from 12 kHz to 20 MHz is less than 160 fs. For a lower power consumption of 5 mW, the phase noise performance is −118 dBc/Hz at 10-kHz offset frequency, −142 dBc/Hz noise floor, and the integrated phase jitter is 212 fs. This performance allows the development of highperformance low-jitter highly-integrated low-cost clocking solutions based on MEMS SAW oscillators replacing traditional quartz crystal and SAW-based discrete solutions.
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