集成二极管的自对准欧姆和自对准植入GaAs栅极场效应管

IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings. Pub Date : 1987-08-10 DOI:10.1109/CORNEL.1987.721225

A. T. Yuen, S. Long, E. Hu, G. A. Patterson

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引用次数: 1

摘要

最近，由于半导体栅异质结构场效应管具有均匀的阈值电压，以及对工艺变化的高耐受性，人们对半导体栅异质结构场效应管的兴趣越来越大。我们演示并比较了两种加工方案，即自对准欧姆(SAO)工艺和自对准植入(SAI)工艺，用于制造硅微电感r-“i - nsu”-硅微电感r- fet (SISFET)。发现slsfet具有高度均匀的阈值电压，背景效应很小。

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Self-aligned Ohmic And Self-Aligned Implant GaAs Gate FET With Integrated Diode

Recently there has been increased interest in semiconductor-gate heterostructure FETs [l-41, due to their potentially uniform threshold voltages, as well as their high tolerance of process variations. We have demonstrated and compared two processing schemes, the self-aligned ohmic (SAO) process and the self-aligned implant (SAI) process, for the fabrication of se mico nducto r-"i nsu lato r"-se mico nducto r FETs (SISFET) . The SlSFETs were found to have highly uniform threshold voltages with little backg ati ng effect.

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IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.

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