精确模拟半导体器件的维格纳-蒙特卡罗方法

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI:10.1109/SISPAD.2014.6931576

P. Ellinghaus, M. Nedjalkov, S. Selberherr

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引用次数: 3

摘要

维格纳方程可以方便地描述粒子在相空间中演化的量子输运问题。对Wigner - Monte Carlo方法的粒子生成方案进行了改进，通过与Schrödinger方程的精确解的比较，验证了该方法提高了模拟的精度。演示了具有时变电位的模拟，并处理了在触点之间具有外部施加电压的器件中出现的问题，从而进一步推进了用于半导体器件模拟的维格纳蒙特卡罗方法。

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The Wigner Monte Carlo method for accurate semiconductor device simulation

The Wigner equation can conveniently describe quantum transport problems in terms of particles evolving in the phase space. Improvements in the particle generation scheme of the Wigner Monte Carlo method are shown, which increase the accuracy of simulations as validated by comparison to exact solutions of the Schrödinger equation. Simulations with a time-varying potential are demonstrated and issues which arise in devices with an externally applied voltage between the contacts are treated, thereby further advancing the Wigner Monte Carlo method for the simulation of semiconductor devices.

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2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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