{"title":"扫描频率梳状显微镜(SFCM)显示了在7纳米节点及以下载流子分析的前景","authors":"M. Hagmann, J. Wiedemeier","doi":"10.1109/ASMC.2019.8791772","DOIUrl":null,"url":null,"abstract":"A new type of scanning probe microscopy is described showing promise for true sub-nanometer resolution in carrier profiling which is essential in failure analysis at and below the 7-nm technology node. The sample resistivity is determined by measuring the attenuation of low-noise attowatt microwave signals generated in a tunneling junction by optical rectification.","PeriodicalId":287541,"journal":{"name":"2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Scanning Frequency Comb Microscopy (SFCM) Shows Promise for Carrier Profiling at and Below the 7-nm Node\",\"authors\":\"M. Hagmann, J. Wiedemeier\",\"doi\":\"10.1109/ASMC.2019.8791772\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new type of scanning probe microscopy is described showing promise for true sub-nanometer resolution in carrier profiling which is essential in failure analysis at and below the 7-nm technology node. The sample resistivity is determined by measuring the attenuation of low-noise attowatt microwave signals generated in a tunneling junction by optical rectification.\",\"PeriodicalId\":287541,\"journal\":{\"name\":\"2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASMC.2019.8791772\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC.2019.8791772","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Scanning Frequency Comb Microscopy (SFCM) Shows Promise for Carrier Profiling at and Below the 7-nm Node
A new type of scanning probe microscopy is described showing promise for true sub-nanometer resolution in carrier profiling which is essential in failure analysis at and below the 7-nm technology node. The sample resistivity is determined by measuring the attenuation of low-noise attowatt microwave signals generated in a tunneling junction by optical rectification.
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