四分之一和亚四分之一微米NMOSFET的热通道噪声

ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095) Pub Date : 2000-03-13 DOI:10.1109/ICMTS.2000.844412

G. Knoblinger, P. Klein, U. Baumann

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引用次数: 24

摘要

我们提出了一种简单有效的方法，从NF50(50欧姆源电阻噪声系数)测量中提取四分之一和亚四分之一微米MOSFET的热通道噪声。对于较短的通道长度，实验结果表明与经典长通道理论的偏差不断上升。对于0.18 /spl mu/m技术，提取了a /spl phi//spl ap/6而不是饱和度的2/3(与长通道理论相比增加了9倍)。

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Thermal channel noise of quarter and sub-quarter micron NMOSFET's

We present a simple and efficient method for the extraction of thermal channel noise of MOSFET's in quarter and sub-quarter micron technologies from NF50 (noise figure at 50 ohm source resistance) measurements. For shorter channel lengths the experimental results shows a continuously rising deviation from the classical long channel theory. For a 0.18 /spl mu/m technology a /spl phi//spl ap/6 instead of 2/3 in saturation was extracted (increase of factor 9 compared to the long channel theory).

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来源期刊

ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095)

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