将非线性电阻器转换为忆阻器的变换器

2011 20th European Conference on Circuit Theory and Design (ECCTD) Pub Date : 2011-10-13 DOI:10.1109/ECCTD.2011.6043393

D. Biolek, J. Bajer, V. Biolková, Z. Kolka

{"title":"将非线性电阻器转换为忆阻器的变换器","authors":"D. Biolek, J. Bajer, V. Biolková, Z. Kolka","doi":"10.1109/ECCTD.2011.6043393","DOIUrl":null,"url":null,"abstract":"A method of analogue emulation of the memristor with its prescribed charge (q<inf>M</inf>) - flux (ϕ<inf>M</inf>) constitutive relation is presented. The memristor is emulated via a resistor with nonlinear current (i<inf>R</inf>) - voltage (v<inf>R</inf>) relationship, and a mutator. The purpose of the mutator is to provide a similarity transformation of the current-voltage characteristic of the resistor into the constitutive relation of the memristor according to the equations q<inf>M</inf>=k<inf>y</inf>i<inf>R</inf>, ϕ<inf>M</inf> =k<inf>x</inf>v<inf>R</inf>, or ϕ<inf>M</inf>=k<inf>y</inf>i<inf>R</inf>, q<inf>M</inf>=k<inf>x</inf>v<inf>R</inf>, where k<inf>x</inf>, k<inf>y</inf> are real numbers fulfilling the condition k<inf>x</inf>k<inf>y</inf>>0. It is shown that there are eight versions of these mutators. One of them is selected for experimental verification.","PeriodicalId":126960,"journal":{"name":"2011 20th European Conference on Circuit Theory and Design (ECCTD)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"41","resultStr":"{\"title\":\"Mutators for transforming nonlinear resistor into memristor\",\"authors\":\"D. Biolek, J. Bajer, V. Biolková, Z. Kolka\",\"doi\":\"10.1109/ECCTD.2011.6043393\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A method of analogue emulation of the memristor with its prescribed charge (q<inf>M</inf>) - flux (ϕ<inf>M</inf>) constitutive relation is presented. The memristor is emulated via a resistor with nonlinear current (i<inf>R</inf>) - voltage (v<inf>R</inf>) relationship, and a mutator. The purpose of the mutator is to provide a similarity transformation of the current-voltage characteristic of the resistor into the constitutive relation of the memristor according to the equations q<inf>M</inf>=k<inf>y</inf>i<inf>R</inf>, ϕ<inf>M</inf> =k<inf>x</inf>v<inf>R</inf>, or ϕ<inf>M</inf>=k<inf>y</inf>i<inf>R</inf>, q<inf>M</inf>=k<inf>x</inf>v<inf>R</inf>, where k<inf>x</inf>, k<inf>y</inf> are real numbers fulfilling the condition k<inf>x</inf>k<inf>y</inf>>0. It is shown that there are eight versions of these mutators. One of them is selected for experimental verification.\",\"PeriodicalId\":126960,\"journal\":{\"name\":\"2011 20th European Conference on Circuit Theory and Design (ECCTD)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"41\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 20th European Conference on Circuit Theory and Design (ECCTD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECCTD.2011.6043393\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 20th European Conference on Circuit Theory and Design (ECCTD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECCTD.2011.6043393","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 41

摘要

提出了一种具有规定电荷(qM) -磁通(ϕM)本构关系的忆阻器的模拟仿真方法。该忆阻器是通过一个具有非线性电流(iR) -电压(vR)关系的电阻器和一个突变器来仿真的。变换器的目的是根据公式qM=kyiR, m =kxvR，或m =kyiR, qM=kxvR，其中kx, ky为满足条件kxky>0的实数，将电阻器的电流-电压特性相似地转换为忆阻器的本构关系。结果表明，这些突变体有8个版本。选取其中一个进行实验验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Mutators for transforming nonlinear resistor into memristor

A method of analogue emulation of the memristor with its prescribed charge (qM) - flux (ϕM) constitutive relation is presented. The memristor is emulated via a resistor with nonlinear current (iR) - voltage (vR) relationship, and a mutator. The purpose of the mutator is to provide a similarity transformation of the current-voltage characteristic of the resistor into the constitutive relation of the memristor according to the equations qM=kyiR, ϕM =kxvR, or ϕM=kyiR, qM=kxvR, where kx, ky are real numbers fulfilling the condition kxky>0. It is shown that there are eight versions of these mutators. One of them is selected for experimental verification.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2011 20th European Conference on Circuit Theory and Design (ECCTD)

自引率

0.00%

发文量