28FDSOI中新的单事件瞬态现象及其对硬化的影响

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI:10.1109/radecs47380.2019.9745659

G. Gasiot, F. Abouzeid, V. Malherbe, J. Damiens, F. Monsieur, C. L. de Boissac, Dimitri Soussan, Vincent Lorquet, T. Théry, P. Roche

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引用次数: 3

摘要

本文介绍了FDSOI28技术中新型单事件瞬态的测量方法。这些set来自埋藏氧化物下面的层，通过晶体管后门(或大块)接触连接到有源节点。这些后门结构用于模拟电路中晶体管的阈值电压控制。这些特定的晶体管被嵌入到一个逆变器链中，在FDSOI28技术加工的测试车上制造一个SET检测装置。为了加深我们对这一现象的理解，我们进行了辐射实验以及电路和TCAD模拟。这些set对本文讨论的设计中的辐射硬化具有影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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New Single Event Transient phenomenon in 28FDSOI and its impact on hardening

This paper shows measurement of new Single Event Transient in FDSOI28 technology. These SETs come from layers beneath the Buried Oxide connected to active nodes through transistor back-gate (or bulk) contact. These back-gate structures are used for threshold voltage control of transistors in analog circuits. These specific transistors were embedded in an inverter chain with a SET detection apparatus manufactured in a test vehicle processed in FDSOI28 technology. Radiation experiments were performed as well as circuit and TCAD simulations to deepen our understanding of this phenomenon. These SETs have implications for radiation-hardening-by-design that are discussed in this paper.

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2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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