S. Loualiche, A. Ginudi, A. Le Corre, D. Lecrosnier, C. Vaudry, L. Henry, C. Guillemot
{"title":"伪晶Ga/sub 0.18/In/sub 0.82/P/InP/Ga/sub 0.47/In/sub 0.53/As HEMT的低温直流特性","authors":"S. Loualiche, A. Ginudi, A. Le Corre, D. Lecrosnier, C. Vaudry, L. Henry, C. Guillemot","doi":"10.1109/ICIPRM.1990.203064","DOIUrl":null,"url":null,"abstract":"A high-gap strained GaInP material has been used to increase Schottky barrier height on InP. This is the first time GaInP has been used for high-electron-mobility transistor (HEMT) fabrication of InP. For these devices the best g/sub m/ for a 1.3- mu m gate HEMT is 300 mS/mm. Transistors of 3- mu m gate length have been studied at low temperature (100 K to 293 K). Their DC electrical characteristics improve upon cooling. The best improvement is obtained at the lowest temperature (+54% for g/sub m/ at 105 K). The structure is stable and does not undergo g/sub m/ or I/sub ds/ collapse at lower temperature, unlike AlGaAs/GaAs heterostructures.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Low temperature DC characteristics of pseudomorphic Ga/sub 0.18/In/sub 0.82/P/InP/Ga/sub 0.47/In/sub 0.53/As HEMT\",\"authors\":\"S. Loualiche, A. Ginudi, A. Le Corre, D. Lecrosnier, C. Vaudry, L. Henry, C. Guillemot\",\"doi\":\"10.1109/ICIPRM.1990.203064\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A high-gap strained GaInP material has been used to increase Schottky barrier height on InP. This is the first time GaInP has been used for high-electron-mobility transistor (HEMT) fabrication of InP. For these devices the best g/sub m/ for a 1.3- mu m gate HEMT is 300 mS/mm. Transistors of 3- mu m gate length have been studied at low temperature (100 K to 293 K). Their DC electrical characteristics improve upon cooling. The best improvement is obtained at the lowest temperature (+54% for g/sub m/ at 105 K). The structure is stable and does not undergo g/sub m/ or I/sub ds/ collapse at lower temperature, unlike AlGaAs/GaAs heterostructures.<<ETX>>\",\"PeriodicalId\":138960,\"journal\":{\"name\":\"International Conference on Indium Phosphide and Related Materials\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1990.203064\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.203064","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low temperature DC characteristics of pseudomorphic Ga/sub 0.18/In/sub 0.82/P/InP/Ga/sub 0.47/In/sub 0.53/As HEMT
A high-gap strained GaInP material has been used to increase Schottky barrier height on InP. This is the first time GaInP has been used for high-electron-mobility transistor (HEMT) fabrication of InP. For these devices the best g/sub m/ for a 1.3- mu m gate HEMT is 300 mS/mm. Transistors of 3- mu m gate length have been studied at low temperature (100 K to 293 K). Their DC electrical characteristics improve upon cooling. The best improvement is obtained at the lowest temperature (+54% for g/sub m/ at 105 K). The structure is stable and does not undergo g/sub m/ or I/sub ds/ collapse at lower temperature, unlike AlGaAs/GaAs heterostructures.<>
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