微盘谐振腔中Ge/SiGe量子阱结构的室温光致发光

2012 Symposium on Photonics and Optoelectronics Pub Date : 2012-05-21 DOI:10.1109/SOPO.2012.6271119

Xiaochi Chen, Y. Huo, E. Fei, G. Shambat, Xi Liu, T. Kamins, J. Vučković, J. Harris

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引用次数: 2

摘要

本文报道了室温条件下载流子约束下具有SiGe势垒的Ge量子阱中直接带隙光致发光的增强。我们还制作了一个微盘谐振器，并提出了Ge量子阱的锥形光纤耦合高q腔模式。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Room Temperature Photoluminescence from Ge/SiGe Quantum Well Structure in Microdisk Resonator

In this paper, we report the enhanced direct band gap photoluminescence from carrier confinement in Ge quantum wells with SiGe barriers at room temperature. We have also fabricated a microdisk resonator and present the tapered-fiber coupled high-Q cavity mode from Ge quantum wells.

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2012 Symposium on Photonics and Optoelectronics

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